IRF7421D1PBF

Vgs(th) (Max) @ Id:	1V @ 250µA
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:	8-SO
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	2W (Ta)
FET Feature:	Schottky Diode (Isolated)
Input Capacitance (Ciss) (Max) @ Vds:	510pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	27nC @ 10V
Series:	FETKY™
Rds On (Max) @ Id, Vgs:	35 mOhm @ 4.1A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	5.8A (Ta)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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The IRF7421D1PBF is a power MOSFET transistor from International Rectifier cooperation. It is widely used in different applications due to its superior performance in comparison to other types of transistors. This type of power MOSFET is widely used in motor drivers, power supplies, converters, telecommunications circuits, computer power supplies, and other high-power applications. The IRF7421D1PBF can be used to switch large currents with high efficiency and reliability. In this article we will discuss the application field and working principle of the IRF7421D1PBF.

Application Field of the IRF7421D1PBF

The IRF7421D1PBF is a power MOSFET designed to switch large currents. It is well suited for use in a variety of applications, including motor drivers, power supplies, converters, and telecommunications circuits. The device is able to withstand high voltages and has an efficient thermal design that allows it to operate at high temperatures. In addition, the IRF7421D1PBF has a low noise level and is easy to drive. This makes it a great choice for applications that require fast switching speeds and low power consumption.

Working Principle of the IRF7421D1PBF

The IRF7421D1PBF is a N-channel power MOSFET. It operates on the principle of a MOSFET transistor. A MOSFET transistor is made up of four parts: the source, the drain, the body, and the gate. In the case of this device, the source is connected to ground, the drain is connected to the load, and the gate is connected to the input signal or control signal.When the MOSFET is in the off state, no current can flow through the transistor. The gate is held at a negative voltage relative to the source, effectively creating a barrier between the source and drain. When a positive voltage is applied to the gate, the barrier is broken, allowing current to flow from the source to the drain. This process is known as \'enhancement mode.\'The IRF7421D1PBF is a Power MOSFET in the enhancement mode. It is capable of switching large currents and can handle up to 800V. This makes it suitable for a variety of applications where high currents and voltages are required.

Conclusion

The IRF7421D1PBF is a N-channel MOSFET designed to switch large currents. It is well suited for use in a variety of applications, including motor drivers, power supplies, converters, and telecommunications circuits. The device is easy to drive, has a low noise level, and is able to withstand high voltages and temperatures. Its efficient thermal design also makes it a great choice for applications that require fast switching speeds and low power consumption.

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