IRF7421D1TR Allicdata Electronics
Allicdata Part #:

IRF7421D1TR-ND

Manufacturer Part#:

IRF7421D1TR

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 30V 5.8A 8-SOIC
More Detail: N-Channel 30V 5.8A (Ta) 2W (Ta) Surface Mount 8-SO
DataSheet: IRF7421D1TR datasheetIRF7421D1TR Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 1V @ 250µA
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2W (Ta)
FET Feature: Schottky Diode (Isolated)
Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Series: FETKY™
Rds On (Max) @ Id, Vgs: 35 mOhm @ 4.1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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IRF7421D1TR Application Field and Working Principle

IRF7421D1TR is a type of field-effect transistor (FET), also known as a metal-oxide-semiconductor field-effect transistor (MOSFET). Typically, FETs are used in amplification circuits, such as amplifiers and switches, and in power control and switching circuits.

The IRF7421D1TR is a logic level N-Channel metal-oxide-semiconductor field-effect transistor (MOSFET). It is a semiconductor device that is normally used in high-power and high-frequency applications. It is a type of FET that is suitable for switching loads that are between Vgs (gate-to-source voltage) of minimum 4.7V up to a maximum of 20V.

The IRF7421D1TR has an RDS(ON) of 0.2 Ohms, a Drain Current of 120A and a pinch-off voltage of 4.7V. It has a wide range of operating temperatures, which can range from -55°C to +175°C. It is made of a silicon core with gold coatings on the leads, which allows it to have high-temperature stability and excellent long-term reliability.

The working principle of a FET involves the application of a voltage across two terminals, a gate and a source. The voltage on the gate triggers the migration of charge carriers, electrons or holes, to the channel region of the device. This causes the channel to become conducting and allows current to flow through the device. As the voltage on the gate increases, the current through the device increases.

The IRF7421D1TR is used in a wide range of applications, such as power switching and amplification circuits. It is ideal for high-power and high-frequency applications that require a low on-resistance (RDS(ON)). This makes it ideal for use in high-efficiency audio amplifiers, switch-mode power supplies, inverters and motor control circuits.

In addition, the low voltage threshold of the IRF7421D1TR allows it to be used in low-voltage systems. This makes it ideal for use in automotive, industrial and mobile applications where low voltages are typically required. Moreover, its wide operating temperature range allows it to be used in a variety of environmental conditions.

Overall, the IRF7421D1TR is a well-rounded FET that is ideal for use in high-power, high-frequency and low-voltage applications. It has a low RDS(ON) which means it can be used for power switching and control. In addition, its wide temperature range makes it suitable for use in a variety of environmental conditions. It is an excellent choice for use in amplifier circuits, switch-mode power supplies, inverters and motor control circuits.

The specific data is subject to PDF, and the above content is for reference

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