| Allicdata Part #: | IRF7424PBF-ND |
| Manufacturer Part#: |
IRF7424PBF |
| Price: | $ 0.97 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET P-CH 30V 11A 8-SOIC |
| More Detail: | P-Channel 30V 11A (Ta) 2.5W (Ta) Surface Mount 8-S... |
| DataSheet: | IRF7424PBF Datasheet/PDF |
| Quantity: | 661 |
| 1 +: | $ 0.87570 |
| 10 +: | $ 0.77805 |
| 100 +: | $ 0.61507 |
| 500 +: | $ 0.47697 |
| 1000 +: | $ 0.37656 |
Specifications
| Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
| Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package: | 8-SO |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 2.5W (Ta) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 4030pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 110nC @ 10V |
| Series: | HEXFET® |
| Rds On (Max) @ Id, Vgs: | 13.5 mOhm @ 11A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 11A (Ta) |
| Drain to Source Voltage (Vdss): | 30V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | P-Channel |
| Part Status: | Discontinued at Digi-Key |
| Packaging: | Tube |
Description
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The IRF7424PBF is a N-channel MOSFET produced by International Rectifier. It is designed for applications such as power supplies, converters and motor control systems. The IRF7424PBF is part of a large family of transistors, including MOSFETs, JFETs and BJTs.A MOSFET, or metal-oxide semiconductor field effect transistor, is a type of semiconductor device that controls current flow by using an electric field to selectively vary the conductivity of a semiconductor material. Unlike a BJT (bipolar junction transistor) which uses a base-emitter current to control a collector-emitter current, MOSFETs have no base current, and therefore require less power to operate.The IRF7424PBF is a N-channel MOSFET device with a drain-to-source voltage of 20V, a gate-to-source voltage of 17V and a maximum drain current of 4.2A. It is constructed from a silicon wafer which has been etched to create a thin oxide layer. The oxide layer acts as a mainly dielectric material which can be polarized by the application of a gate voltage. When an adequate charge is built up, the N-channel MOSFET becomes “turned on” and current flows from the drain to the source. The charge on the gate is maintained by the gate-source voltage, allowing current to flow as long as the voltage is sustained.The main advantages of the IRF7424PBF are its low power consumption, high voltage and current ratings, and its fast response time. It is commonly used in power supplies, converters, and motor control systems. In power supplies, MOSFETs are used to control the input current to a device, switching the current on and off in order to regulate the voltage. In converters, the MOSFETs are used to switch power from one type of circuit to another. Finally, in motor control systems, MOSFETs are used to provide PWM (pulse-width modulation) control of a motor, which allows for precise speed and torque control.The IRF7424PBF is a versatile device with a wide range of applications. Its large current and voltage ratings, as well as its low power consumption make it a great choice for many power management applications. Additionally, its fast response time makes it ideal for motor control, where quick action is essential. This device is becoming increasingly popular, as newer technologies continue to require higher levels of power management.The specific data is subject to PDF, and the above content is for reference
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IRF7424PBF Datasheet/PDF