| Allicdata Part #: | IRF7425-ND |
| Manufacturer Part#: |
IRF7425 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET P-CH 20V 15A 8-SOIC |
| More Detail: | P-Channel 20V 15A (Ta) 2.5W (Ta) Surface Mount 8-S... |
| DataSheet: | IRF7425 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 1.2V @ 250µA |
| Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package: | 8-SO |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 2.5W (Ta) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 7980pF @ 15V |
| Vgs (Max): | ±12V |
| Gate Charge (Qg) (Max) @ Vgs: | 130nC @ 4.5V |
| Series: | HEXFET® |
| Rds On (Max) @ Id, Vgs: | 8.2 mOhm @ 15A, 4.5V |
| Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C: | 15A (Ta) |
| Drain to Source Voltage (Vdss): | 20V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | P-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
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IRF7425 is an advanced Metal-oxide-semiconductor Field-effect Transistor (MOSFET) designed for high-density, high-current application fields. The MOSFET structure consists of four terminals: the gate, drain, source and body (also known as substrate). The gate is electrically insulated from the drain and source by a thin layer of silicon dioxide (SiO2). When a voltage is applied to the gate, a thin inversion layer is formed to form a conducting channel between the source and drain. This allows current to flow between the two terminals, resulting in an amplification or switching effect.
The IRF7425 is a single-ended and depletion-mode MOSFET. This type of MOSFET is ideal for applications that require power switching such as motor drives, relays and resistive heating elements. It is also ideal for driving single-ended peripherals such as infrared receivers, audio amplifiers and other low power applications. Depletion-mode MOSFETs have a small turn-on voltage which allows for lower current consumption, making them more efficient and suitable for battery-powered applications.
The IRF7425 is a high power device with a maximum current rating of 8.5 A and a maximum voltage rating of 20 V. It offers superior high-frequency switching performance and is built on a low-on-resistance chip, enabling lower total system cost. It also contains integrated protection circuitry designed to protect against input signal, voltage and temperature surges, making it a good choice for applications that require serious protection.
The working principle of an IRF7425 is similar to other MOSFETs. When a voltage is applied to the gate, it changes the threshold voltage of the MOSFET. This causes the MOSFET to go into a linear region of operation, allowing electrons to flow between the source and drain. When the gate voltage is increased, the drain current increases, allowing for an amplified or switched signal.
The IRF7425 offers excellent performance for a variety of applications. It is suitable for medium and high-density power modules, motor drives, relays and resistive heating elements. It offers superior high-frequency performance and is easy to use with a low turn-on voltage. Its integrated protection circuitry makes it an ideal choice for applications that require significant protection against input signal, voltage and temperature surges.
The specific data is subject to PDF, and the above content is for reference
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IRF7425 Datasheet/PDF