IRF7425TR

Vgs(th) (Max) @ Id:	1.2V @ 250µA
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:	8-SO
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	2.5W (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	7980pF @ 15V
Vgs (Max):	±12V
Gate Charge (Qg) (Max) @ Vgs:	130nC @ 4.5V
Series:	HEXFET®
Rds On (Max) @ Id, Vgs:	8.2 mOhm @ 15A, 4.5V
Drive Voltage (Max Rds On, Min Rds On):	2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C:	15A (Ta)
Drain to Source Voltage (Vdss):	20V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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The IRF7425TR is a Power MOSFET that is capable of sustaining high levels of current while operating in the linear region. This type of transistor is used in a wide variety of applications, ranging from small-signal processing to large-scale industrial power control. The IRF7425TR is an N-Channel Power MOSFET, meaning the channel is formed by a vertical n-type silicon material and is designed to be operated as an enhancement mode device.As with all MOSFETs, the IRF7425TR is an insulated-gate field-effect transistor and works through a basic principle of operation involving voltage control over current. Basically, when the gate of the MOSFET is provided with a certain voltage, the channel of the transistor will open and allows current to flow through the channel. These transistors provide an excellent combination of low on-resistance and high switching speed.The IRF7425TR is specifically designed for surface-mount assembly, which means it is suitable for automated board placement when used with other surface-mount components. This provides improved power dissipation, increases board density, and provides an efficient implementation of the control circuitry. This component is frequently used in a wide range of electrical circuits, including power switching applications, analog signal conditioning, digital logic circuits, and other power management applications.The IRF7425TR is typically specified to handle a maximum peak drain current of approximately 5.6A and a maximum drain-source voltage of 100V. It supports a variety of operating temperatures, with a temperature range of -40°C to +150°C. Additionally, it offers an optimized figure of merit - a ratio of on resistance versus gate charge - of 1 ohm/µC.The efficiency of the IRF7425TR is primarily determined by its gate capacitance and gate-to-source charge. The gate capacitance represents the amount of energy required to open the gate, or to deflect the channel. The gate-to-source charge is the energy required to maintain the channel after it has been opened. These two components, along with the drain-source on-resistance, govern how efficiently and quickly the device can be switched from its off state to its on state.In terms of breakdown voltage, the IRF7425TR has a minimum breakdown voltage of 56V, which is the voltage at which the drain-source voltage will cease to increase. This ensures that there is no excess current flowing through the transistor. Furthermore, the package size is exceptionally small, necessitating the use of very small amounts of electrical components.The IRF7425TR is particularly suited to applications that require the integration of several complex electrical components, as it can handle both high currents and switch rapidly between states. This is particularly beneficial for applications that require efficient power control, including those used in automotive and industrial electronics. Owing to its high performance characteristics, the IRF7425TR is often used in the design of computer systems, where it can rapidly switch between power modes while dissipating as little energy as possible.In conclusion, the IRF7425TR is a highly specialised power MOSFET. It combines high current capability with fast switching performance, making it ideal for power control applications. Additionally, the small package size and low gate capacitance of the IRF7425TR makes it ideal for applications where the integration of several electrical components is necessary.

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