IRF7426TR Allicdata Electronics
Allicdata Part #:

IRF7426TR-ND

Manufacturer Part#:

IRF7426TR

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 20V 8-SOIC
More Detail: N-Channel 20V Surface Mount 8-SO
DataSheet: IRF7426TR datasheetIRF7426TR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: HEXFET®
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: --
Rds On (Max) @ Id, Vgs: --
Vgs(th) (Max) @ Id: --
FET Feature: --
Power Dissipation (Max): --
Operating Temperature: --
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Description

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The IRF7426TR is a MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) which belongs to the International Rectifier’s 7400 series of components. It is a single MOSFET and is also known as an enhancement type device. This device is capable of controlling very large amounts of current and as such, it is suitable for a wide range of applications that require good performance, power efficiency and reliability.

Application Field

The IRF7426TR is primarily designed to be used as a power switch in DC-DC converters, motor controls, low-side switch, lighting and any other application where a large amount of current needs to be controlled. It is a high-performance device with a very low on-resistance and is capable of conducting up to 65A at a gate voltage of 12V, making it ideal for applications such as battery charger, power supplies, load switch and DC-DC converters.

It can also be used in switching circuits, relay circuits, and for driving LEDs. In addition, the IRF7426TR can be used for low-voltage protection, over-voltage protection, and even for ESD (electro-static discharge) protection. This device also features a high-side voltage protection, which ensures the reliability and safety of the circuit it is connected to.

Working Principle

The IRF7426TR MOSFET works based on the principles of a field-effect transistor (FET). It is a three-pin device, comprising of the drain, gate and source pins. The voltage applied to the gate terminal determines the state of the MOSFET. When the gate is given the positive voltage, it attracts charge carriers (electrons) which results in the MOSFET being in the \'ON\' state. When the voltage applied to the gate is negative, it pushes away the charge carriers and the MOSFET is said to be in the \'OFF\' state.

The IRF7426TR is a very efficient MOSFET as it has a low on-resistance (R DS(on)) for a given temperature. This R DS(on) helps to minimize the power loss in the form of heat generated within the circuit. Furthermore, the MOSFET also features an extremely fast switching speed, allowing it to perform efficiently in power applications. The fast switching speed of this device helps to improve the efficiency of the circuit overall.

In addition to the low on-resistance and fast switching speed, the IRF7426TR has another important feature - the over-voltage protection. This feature ensures that the device is protected from high voltage, which might otherwise cause damage to the device or the circuit it is connected to.

Conclusion

The IRF7426TR MOSFET is a high-performance device that is suitable for a wide range of applications. It has a low on-resistance which ensures low power loss in the form of heat, and a fast switching speed which helps improve the efficiency of the circuit overall. Furthermore, it also features an over-voltage protection, which helps to protect the device from damage caused due to high voltage. Due to its features, this MOSFET is a suitable choice for power switching applications such as DC-DC converters, load switch, lighting, motor controls and more.

As such, the IRF7426TR MOSFET is an ideal choice for power applications that require efficient and reliable performance.

The specific data is subject to PDF, and the above content is for reference

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