IRF7433PBF

Vgs(th) (Max) @ Id:	900mV @ 250µA
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:	8-SO
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	2.5W (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1877pF @ 10V
Vgs (Max):	±8V
Gate Charge (Qg) (Max) @ Vgs:	20nC @ 4.5V
Series:	HEXFET®
Rds On (Max) @ Id, Vgs:	24 mOhm @ 8.7A, 4.5V
Drive Voltage (Max Rds On, Min Rds On):	1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C:	8.9A (Ta)
Drain to Source Voltage (Vdss):	12V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Obsolete
Packaging:	Tube

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Introduction

The IRF7433PBF is a special type of Field-Effect Transistor (FET) designed for P-Channel enhancement-mode. This power MOSFET, also known as ‘MOSFET’, is designed for applications such as audio power amplifiers, power supplies, DC-DC converters, inverters and motor control. It has an ultimate drain-source breakdown voltage of 500V, a maximum RDS(on) of 0.029 Ω at 10 Vgs and a maximum drain current of 24A.

Application Field

The IRF7433PBF is widely used in the various field, such as audio power amps, DC-DC converters (flyback, push-pull, buck and boost), motors, computer peripherals, and variable voltage controllers. There are several advantages of using the IRF7433PBF. It has an extended battery life time since it consumes less power compared to other power MOSFETs. In addition, due to its low static drain-to-source on-resistance (RDS(on)), it is relatively better at handling very large currents. It also features a maximum operation temperature of up to 175°C, ensuring reliable operation.

Working Principle

The IRF7433PBF works by using the field effect principle. This is the concept of using an electric field created by one or more gate terminals that control the flow of electrons between the source and the drain terminals. When the drain is at a different potential to the source, an electric field is created between the two. As a result, current can flow from the drain to the source. The magnitude of the current is determined by the gate-to-source voltage. As the gate-to-source voltage (VGS) increases, the drain current (ID) increases. When the VGS becomes sufficiently large (approximately 8V), the drain current reaches a maximum or “saturated” value. The maximum drain current (ID(max)) is directly proportional to the gate-to-source voltage (VGS). Thus, by varying the VGS, it is possible to precisely control the magnitude of the drain current.

Conclusion

In conclusion, the IRF7433PBF is an advanced power MOSFET designed to function as a P-Channel enhancement-mode in applications requiring high frequency operation. It is popularly used in various applications ranging from audio power amplifiers, power supplies, DC-DC converters, inverters, and motor control. The IRF7433PBF works by relying on the field effect principle, where an electric field is created between the source and the drain and the magnitude of the current is determined by the gate-to-source voltage. As such, the IRF7433PBF is capable of delivering high performance and reliability in various critical applications where reliability and accuracy are needed.

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