
Allicdata Part #: | IRF7450PBF-ND |
Manufacturer Part#: |
IRF7450PBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 200V 2.5A 8-SOIC |
More Detail: | N-Channel 200V 2.5A (Ta) 2.5W (Ta) Surface Mount 8... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 5.5V @ 250µA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 940pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 39nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 170 mOhm @ 1.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 2.5A (Ta) |
Drain to Source Voltage (Vdss): | 200V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Discontinued at Digi-Key |
Packaging: | Tube |
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Introduction
The IRF7450PBF is a N-Channel MOSFET developed by International Rectifier for applications in consumer electronics, automotive electronics and industrial markets. The device features a fast switching MOSFET configuration with a maximum RDS of 1.7 ohms delivering up to 45V drain-to-source breakdown voltage. In addition, the dual N-Channel device offers low on-resistance and high power handling capability.
Application Fields
The IRF7450PBF can be used in many areas and applications in consumer electronics, automotive electronics and industrial markets such as switching power supplies, lighting and lighting controls, audio and amplifiers, DC-DC converters, and power management products. It is also suitable for use in mobile and wireless communications, bridge circuits and other high-current load applications.
Working Principle
The IRF7450PBF operates using a MOSFET-type structure. MOSFET stands for Metal Oxide Semiconductor Field Effect Transistor and is used for its high power handling capability and low on-resistance. The MOSFET structure consists of a source, gate, and drain. The source is the negative terminal, the gate is the positive terminal, and the drain is the positive terminal in between the two. When a suitable voltage is applied between the gate and the source, a conduction channel is formed between the source and drain terminals. This forms a circuit, allowing current to flow through the MOSFET.
The MOSFET has been designed to operate in the as-switched mode and as-rest mode. As-switched mode is when the MOSFET is turned ON, allowing current to flow, while as-rest mode is when the MOSFET is turned OFF, blocking the flow of current. The as-switched mode is dependent on the threshold voltage, which is the voltage at which the conduction channel is formed. The IRF7450PBF has a threshold voltage of 3.5V and can switch up to 45V.
Conclusion
The IRF7450PBF is a dual N-Channel MOSFET developed by International Rectifier for applications in consumer electronics, automotive electronics and industrial markets. It features a fast switching MOSFET configuration with a maximum RDS of 1.7 ohms, a low on-resistance, and a high power handling capability. In addition, it has a threshold voltage of 3.5V and can switch up to 45V. The IRF7450PBF is suitable for use in applications such as switching power supplies, lighting and lighting controls, audio and amplifiers, DC-DC converters, and power management products.
The specific data is subject to PDF, and the above content is for reference
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