IRF7450TR Allicdata Electronics
Allicdata Part #:

IRF7450TR-ND

Manufacturer Part#:

IRF7450TR

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 200V 2.5A 8-SOIC
More Detail: N-Channel 200V 2.5A (Ta) 2.5W (Ta) Surface Mount 8...
DataSheet: IRF7450TR datasheetIRF7450TR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 940pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 170 mOhm @ 1.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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A field effect transistor or FET is a type of transistor commonly used in electronic projects. The IRF7450TR is a type of Field-Effect Transistor (FET) which is specially designed for high-current and fast switching applications. The IRF7450TR is also known as an Insulated Gate Bipolar Transistor (IGBT), which is a type of power transistor.

The IRF7450TR is a fast switching transistor commonly used for a wide range of applications such as power supplies, rectifiers, audio amplifiers, motor control, switching regulators, and lighting control. In addition, it can be used as an efficient switch in many applications such as logic circuits and relay circuits.

The IRF7450TR is a MOSFET transistor, which stands for Metal Oxide Semiconductor Field Effect Transistor. This type of transistor is characterised by its advantages over other transistors like the BJT (Bipolar Junction Transistor). Specifically, it has lower power consumption, no parasitic capacitances, and higher switching speeds.

The IRF7450TR uses a metal-oxide-semiconductor structure, in which the source and drain of one MOSFET is coupled to the source and drain of the other. This type of structure helps to minimise noise, increase the speed of switching, and reduce the power consumption of the system. The IRF7450TR uses a voltage-controlled gate and is capable of high current levels.

Unlike other power transistors, the IRF7450TR is also designed to operate in a low-voltage environment, as low as 4.5 volts. This makes it an ideal choice for low-power applications where high current levels are required. Furthermore, the operating temperature range of the IRF7450TR is -55C to 125C, which makes it suitable for use in both extreme ambient temperatures as well as low-power applications.

The working principle of an IRF7450TR transistor is relatively simple. A voltage is applied to the gate which in turn controls the current flow between the drain and the source. If a positive voltage is applied to the gate, current will flow from the drain to the source and vice versa. When the gate voltage is low, the current flow from the drain to the source is blocked, meaning that the IRF7450TR acts like a switch. This means that the IRF7450TR can be used as a switch in many different applications as it can be easily operated and controlled.

In summary, the IRF7450TR is a single, fast switching MOSFET transistor that is specially designed for high-current and fast switching applications. It has a low-voltage operation, high currents, and wide operating temperature range, and uses a voltage-controlled gate. In addition, due to its MOSFET structure, the IRF7450TR also has low power consumption and no parasitic capacitances, making it an ideal choice for many electronic projects.

The specific data is subject to PDF, and the above content is for reference

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