Allicdata Part #: | IRF7450PBFTR-ND |
Manufacturer Part#: |
IRF7450TRPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 200V 2.5A 8-SOIC |
More Detail: | N-Channel 200V 2.5A (Ta) 2.5W (Ta) Surface Mount 8... |
DataSheet: | IRF7450TRPBF Datasheet/PDF |
Quantity: | 8000 |
Vgs(th) (Max) @ Id: | 5.5V @ 250µA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 940pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 39nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 170 mOhm @ 1.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 2.5A (Ta) |
Drain to Source Voltage (Vdss): | 200V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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IRF7450TRPBF is a single-packaged product that belongs to the family of discrete FETs and MOSFETs. It is a power field-effect transistor that is commonly used in switch-mode power supply applications like DC/DC converters and High Frequency Transducers and Isolators. This product can be used to switch, amplify, and detect the changes in currents and voltages.
The IRF7450TRPBF is a high voltage, high current, and high speed power transistor that has a maximum current rating of 175 Amps and a maximum drain-source voltage rating of 100V. It has a maximum total power dissipation capacity of 160W at 25⁰C. It boasts fewer bond wires, an improved gate-source capacitance ratio and a low THD (Total Harmonic Distortion) and accompanying current ripple.
The IRF7450TRPBF provides very fast switching characteristics and has a unique gate oxide design with a very low reverse recovery charge. This makes it very suitable for high frequency applications such as mobile phones and portable devices that require high efficiency power convertors. It can also be used in motor control and switching applications with low operational line losses.
The working principle of the IRF7450TRPBF is based on the MOSFET, or Metal Oxide Semiconductor FET (Field Effect Transistor). The MOSFET is a three-terminal device which consists of source, gate, and drain terminals. It is an electrical switching device, with a conductive-gate electrode that is used as a control mechanism to change the intensity of the applied current and voltage. When the gate-source voltage reaches the threshold level, it triggers the conduction of the source and drain region. By changing the gate-source voltage, it can be used to control the current and voltage levels.
In the case of IRF7450TRPBF, it utilizes a special gate oxide technology to provide faster switching times, reduce reverse recovery charge and lower total harmonic distortion. It also provides high amounts of current, high drain-source voltage, and a low RDS(ON) (Drain-Source On-state Resistance), which helps to make this device more efficient and reliable.
In conclusion, the IRF7450TRPBF is a power transistor that can be used in numerous types of applications. It is capable of providing high amounts of current, a low RDS(ON), and fast switching times. It is also very reliable and can be used for a variety of switching and motor control applications. With its efficient gate oxide technology and reduced reverse recovery charge, the IRF7450TRPBF is an ideal choice for high-end electronic devices.
The specific data is subject to PDF, and the above content is for reference
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