| Allicdata Part #: | IRF7455-ND |
| Manufacturer Part#: |
IRF7455 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 30V 15A 8-SOIC |
| More Detail: | N-Channel 30V 15A (Ta) 2.5W (Ta) Surface Mount 8-S... |
| DataSheet: |  IRF7455 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Vgs(th) (Max) @ Id: | 2V @ 250µA |
| Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package: | 8-SO |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 2.5W (Ta) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 3480pF @ 25V |
| Vgs (Max): | ±12V |
| Gate Charge (Qg) (Max) @ Vgs: | 56nC @ 5V |
| Series: | HEXFET® |
| Rds On (Max) @ Id, Vgs: | 7.5 mOhm @ 15A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 2.8V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 15A (Ta) |
| Drain to Source Voltage (Vdss): | 30V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
Description
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The IRF7455 is a single channel enhancement type, field-effect transistor (FET) with very low On-resistance and high breakdown voltage, making it suitable for a wide range of applications. Its low On-resistance also makes it a great choice for low power consumption. The IRF7455 is an ideal choice for applications such as power switches, H-bridge and motor control, interface, power management, and security systems.
The IRF7455 provides excellent heat dissipation, low thermal resistance, and high peak current. It is also a very cost-effective solution and is available in a wide range of packages such as TO, IPAK and SOIC, offering great design flexibility. The device utilizes a lateral structure with the drain connected to the top and the source to the bottom, allowing the device to operate in high-side or low-side configurations.
The IRF7455 is an N-channel FET and its most important component is the gate. The gate has two metal contacts, for the positive and negative sides, allowing for the device to be configured for either depletion or enhancement mode operation. The gate is made up of a metal oxide semiconductor, or MOSFET, with transistors inside it. This allows the device to control the amount of current that can be passed through it. The gate also helps to reduce the power consumption of the device, and to ensure that it operates reliably and efficiently.
The IRF7455 operates on a simple principle. The gate voltage is used to control the amount of current that passes through the device. If the gate voltage is increased, the current increases, and if the gate voltage is decreased, the current decreases. This simple principle is the same for both N-channel and P-channel FETs. The device can be used as an on/off switch, where the current is either completely off or completely on, or as a variable resistor, where the current can be adjusted to suit the application.
The IRF7455 is mainly used in power applications, where low On-resistance and high stability are required. It can be used in power converters, power supplies, motor control, and solenoid control. It is also used in analog applications, where it can be used as an adjustable current source or as a current amplifier. It is also used for RF switching applications and H-bridges. The IRF7455 is also widely used as a voltage level shifter in digital electronics, as it offers a low threshold voltage and low switching time.
The IRF7455 offers a wide range of features and benefits which make it an ideal choice for many applications. It offers low On-resistance, low power consumption, high peak current, good heat dissipation, and excellent stability. It is cost-effective, widely available in several different packages, and can be configured for either depletion or enhancement mode operation. Finally, its gate voltage can be used to easily control the amount of current flowing through the device, making it a great choice for many applications.
The specific data is subject to PDF, and the above content is for reference
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