| Allicdata Part #: | IRF7456PBF-ND |
| Manufacturer Part#: |
IRF7456PBF |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 20V 16A 8-SOIC |
| More Detail: | N-Channel 20V 16A (Ta) 2.5W (Ta) Surface Mount 8-S... |
| DataSheet: | IRF7456PBF Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 2V @ 250µA |
| Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package: | 8-SO |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 2.5W (Ta) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 3640pF @ 15V |
| Vgs (Max): | ±12V |
| Gate Charge (Qg) (Max) @ Vgs: | 62nC @ 5V |
| Series: | HEXFET® |
| Rds On (Max) @ Id, Vgs: | 6.5 mOhm @ 16A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 2.8V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 16A (Ta) |
| Drain to Source Voltage (Vdss): | 20V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Discontinued at Digi-Key |
| Packaging: | Tube |
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IRF7456PBF is a single N-channel power MOSFET which is specifically designed for circuit applications involving load and power management. It is a grounded source device with an on-state resistance that can handle a voltage up to 60 Volts. It has a fast switching speed and a temperature range of -55 to +170 ?C and consequently it can be used in a variety of applications.
IRF7456PBF is a field-effect transistor (FET) which utilizes a metal oxide semiconductor (MOS) field insulation between a voltage carrying channel and a gate in order to control current flow. It is also known as an insulated gate FET (IGFET) or a substrate FET (SFET). Although it is a single transistor, it is composed of two parts; the drain, which is an input, and the source, which is an output.
The fundamental principle of IRF7456PBF revolves around the transistor’s ability to conduct a current only when voltage applied across the base-to-drain junction (VDS) is greater than the threshold voltage (VTH). This is also known as the avalanche breakdown. Thus, it is used as a switch to allow current to pass between the drain and source side when the gate-to-source voltage (VGS) is greater than the threshold voltage; and to prevent current to pass when it is below the threshold voltage.
One of the applications of IRF7456PBF is load and power management in DC-to-DC converters, typically built around circuits such as Step-Down Switched Mode Power Supply (SMPS). For example, when a voltage on the source side is greater than the one on the drain side, current needs to flow from the source to the drain in order to balance the load. In such cases, the IRF7456PBF is used to control the output voltage by switching on and off the conduction path. This can be achieved by controlling the amount of voltage applied to the gate which in turn affects the current flowing through the device.
IRF7456PBF is also used in the motor control industry, especially in applications that need the motor’s acceleration and speed to be regulated. The voltage applied to the gate controls the motor’s speed and direction while the current flowing through the device determines the motor’s acceleration. Its ability to handle high voltages makes it an ideal solution for most motor control applications as well.
Overall, the IRF7456PBF’s fast switching speed, low on-state resistance, wide temperature range and its ability to handle high voltages makes it an ideal choice for power and load management applications. It is also an extremely versatile transistor that is used in a variety of other applications such as motor control, smart power supplies and power conversion.
The specific data is subject to PDF, and the above content is for reference
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IRF7456PBF Datasheet/PDF