IRF7457PBF Allicdata Electronics
Allicdata Part #:

IRF7457PBF-ND

Manufacturer Part#:

IRF7457PBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 20V 15A 8-SOIC
More Detail: N-Channel 20V 15A (Ta) 2.5W (Ta) Surface Mount 8-S...
DataSheet: IRF7457PBF datasheetIRF7457PBF Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 3V @ 250µA
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 10V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 4.5V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 7 mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Discontinued at Digi-Key
Packaging: Tube 
Description

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IRF7457PBF is a field-effect transistor (FET) device, commonly referred to as a metal-oxide-semiconductor field-effect transistor (MOSFET). It is a power transistor manufactured by International Rectifier Corporation. IRF7457PBF is a logic-level enhancement-mode MOSFET that has a drain-source on resistance of just 4.5 ohms (maximum) at a gate voltage of 4.5 V. It has a very low input capacitance and a very fast switching time, which makes it suitable for a wide range of applications.

Applications

The major application of IRF7457PBF is in power products like DC-DC converters, power switching devices, power supply, and other heavy-load electronic devices that require high current handling capability. It has the ability to control high voltage and high current, which makes it suitable for a wide range of applications such as PWM control circuits, switching regulators, solenoid drivers, and DC motor control. It is also widely used in automotive powertrain applications, where it is used as a switching device for controlling the actuation of fuel injectors.

Working Principle

The most common type of FET device is an enhancement-mode MOSFET, and IRF7457PBF is an enhancement-mode MOSFET. The working principle of an enhancement-mode MOSFET is based on the gate voltage that controls the resistance between the source and the drain. When the gate voltage (Vgs) is less than the threshold voltage (Vth) of the transistor, it is considered to be “off”, and the resistance between the source and drain is very high. When the gate voltage is applied, it creates an inversion layer in the semiconductor material which reduces the resistance between the source and the drain, thus allowing current to flow through it.

In the case of IRF7457PBF, the threshold voltage for this particular device is 2.5V, and the on-resistance is 4.5 ohms. The on-resistance is the amount of resistance between the source and drain when the gate voltage is applied. This characterizes the speed at which the transistor can be switched on and off, and the amount of current that can be handled.

In addition, the device also has a very fast response time. This is due to its low input capacitance, which allows it to switch quickly by allowing more current to pass through the transistor when the gate voltage is applied.

Overall, IRF7457PBF is a highly efficient and reliable device, suitable for a wide range of applications where power handling and high-speed switching is required.

The specific data is subject to PDF, and the above content is for reference

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