IRF7458TR

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IRF7458TR is a single N-channel Power MOSFET created by International Rectifier (IR) company. It is made of same material as any other MOSFET, but bears some major improvements when compared to its earlier counterparts. This device is suitable for use in applications requiring a rugged, fast switching solution with a high-current rating. IRF7458TR is a depletion-mode MOSFET, with its gate DC voltage very slightly positive with respect to its source. It has a drain-source breakdown voltage rating at 75V and a maximum drain current of 42A. The R_DS(on) for this device is measured as 0.010Ω.

IRF7458TR is highly suitable for use in high current and high frequency applications with its high-temperature capability over 175°C. Also, its high transconductance is ideal for driving high current loads with low gate drive. IRF7458TR is most suited for use in areas of power management, switched-mode power supplies, DC-DC converters, Class-D audio amplifiers, home appliances, and automotive electronics. Moreover, it can be used in applications where the switching happens quickly, such as in inverter applications or chopper circuits.

The working principle of IRF7458TR is similar to all other MOSFETs. It utilizes the fact that the application of a voltage on the Gate-Drain (called the Gate voltage) is capable of controlling or modulating the flow between the drain and source, thus controlling the current through the power MOSFET. The MOSFETs gain their amplification property due to the oscillating electric field created between the Metal–Oxide–Silicon regions when the gate voltage is applied. When a positive gate voltage is provided on the Gate-Drain, the positive charges start to accumulate on the oxide layer, and as a result, the electrons from the Drain end are attracted and collected through the oxide layer, causing a decrease in the resistance between the Drain and Source and allowing current to flow through the two points. Similarly, reversing the polarity of the Gate voltage eliminates the charges created on the oxide layer and substrate, thereby increasing the resistance and blocking off the current flow.

IRF7458TR is one of the most suitable MOSFETs devices available in the market, possessing all the properties a high power devices should have. Its high-temperature and current capability, as well as its small size, make it a great choice for applications where high current, high frequency, and small size are a priority. It can handle a continuous drain current of 42A, and a high transconductance make it very suitable for applications such as DC-DC converters, switching, power management, and other high-current tasks. Due to its rugged design and low drain-source voltage, it is an ideal choice for use in applications where switching has to occur quickly.

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