IRF7459 Allicdata Electronics
Allicdata Part #:

IRF7459-ND

Manufacturer Part#:

IRF7459

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 20V 12A 8-SOIC
More Detail: N-Channel 20V 12A (Ta) 2.5W (Ta) Surface Mount 8-S...
DataSheet: IRF7459 datasheetIRF7459 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 2V @ 250µA
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2480pF @ 10V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 4.5V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 9 mOhm @ 12A, 10V
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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IRF7459 is an advanced metal oxide semiconductor field effect transistor (MOSFET) that utilizes DMOS technology. It is composed of different layers of semiconductor material for a variety of applications. This device was released by International Rectifier Corporation. As a single transistor, IRF7459 is capable of providing maximum drain current and maximum drain-source voltage in high frequency switching applications.

The features of the IRF7459 MOSFET include high voltage operation, high switching speed, and low resistor. Its switching speed allows it to operate in various conditions such as high frequency power supplies and digital logic switching, while its low drain resistance is designed to reduce power consumption. It also has a high-temperature operating range, making it suitable for use in high-temperature environments. Additionally, this device is designed to be compatible with various voltage levels (from 5V to 30V).

The working principle of the IRF7459 is based on the Gate–Source Voltage (V GS ) control of the MOSFET. When the voltage between the gate and source is of the correct level, it will open or close a channel in between the drain and source resulting in an output that is limited only by the on-state resistance of the MOSFET. This voltage control allows the current in the device to be turned on or off, allowing it to perform many different tasks.

The IRF7459 MOSFET is commonly found in a variety of applications. These include power supplies, voltage regulators, motor controllers, DC-DC converters, automotive systems and personal electronic devices. It is highly recommended for use in portable electronic devices due to its lower power consumption and high reliability.

Overall, the IRF7459 is an advanced MOSFET that provides excellent performance in high frequency applicationsand low-power consumption. The device is known for its high switching speed, high voltage operation, and low gate and source resistor. Additionally, the device has a wide temperature range, making it suitable for use in high-temperature environments. The IRF7459 is an excellent device for all kinds of applications, from automotive systems to personal electronic devices.

The specific data is subject to PDF, and the above content is for reference

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