Allicdata Part #: | IRF7460-ND |
Manufacturer Part#: |
IRF7460 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 20V 12A 8-SOIC |
More Detail: | N-Channel 20V 12A (Ta) 2.5W (Ta) Surface Mount 8-S... |
DataSheet: | IRF7460 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2050pF @ 10V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 19nC @ 4.5V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 10 mOhm @ 12A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 12A (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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IRF7460 is a power MOSFET belonging to the power MOSFETs family. It is a single-FET with a drain-source breakdown voltage of 260V and no adjustable gate threshold voltage. It can handle up to 8A current in pulsed condition. As it is a depletion mode device, it needs to be made off when not in use.
IRF7460 is a versatile MOSFET which can be used in a wide range of applications. It can be used in low voltage switching circuits, switching power supplies, DC-DC converters, high-frequency switchmode power supplies, solar panel inverters, motor driver circuits, motor control systems and general purpose switching circuits.
The working principle of IRF7460 is based on the basic operation of MOSFETS. It consists of an oxide-coated gate between a source and a drain. The gate terminal is positively charged, which creates a gate - source voltage and induces an electric field in the channel. If the gate - source voltage is large enough, a controllable inversion layer is created in the channel region. This inversion layer acts as a conducting channel between the source and the drain and a drain - source current flows through the transistor. The magnitude of the current is determined by the gate - source voltage. If the gate - source voltage is reduced, the inversion layer disappears and the transistor turns off.
IRF7460 can be used in a variety of applications since it is a versatile single MOSFET. It is a reliable, cost-effective and easy-to-use power MOSFET. It has a low on-state resistance and is suitable for both high-frequency switching and long-duration current sank circuits. It is also capable of handling high current in pulsed conditions and can be used for several power-switching circuits in different applications.
In general, an IRF7460 MOSFET is suitable for any DC power switching application that requires low on-state resistance, high current handling in pulsed conditions, and low input capacitance. It is suitable for use in low voltage switching circuits, motor control systems, motor driver circuits, solar panel inverters, switching power supplies, and high-frequency switchmode power supplies among others.
The specific data is subject to PDF, and the above content is for reference
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