IRF7463 Allicdata Electronics
Allicdata Part #:

IRF7463-ND

Manufacturer Part#:

IRF7463

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 30V 14A 8-SOIC
More Detail: N-Channel 30V 14A (Ta) 2.5W (Ta) Surface Mount 8-S...
DataSheet: IRF7463 datasheetIRF7463 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 2V @ 250µA
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3150pF @ 15V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 51nC @ 4.5V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 8 mOhm @ 14A, 10V
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The IRF7463 is an N-Channel MOSFET designed for high voltage applications and is part of International Rectifier’s portfolio of intelligent high-voltage MOSFETs. IRF7463 offers high current densities for switching and low conduction losses for power dissipation. It is suitable for a variety of high performance applications including, but not limited to, power supplies, DC-DC converters and motor control.

The main application field for the IRF7463 is as a power switch in applications requiring high-voltage and high-current switching, such as power supplies and DC-DC converters. This MOSFET is also well suited for motor control applications. It is often used in stepper motor control applications due to its high performance at high switching speeds and low gate drive requirements.

The IRF7463 is a single N-Channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET). A MOSFET has three terminals known as the gate, drain and source. The gate terminal is used to control the flow of current between the drain and source terminals. The device is designed to operate with a voltage across the drain and source terminals, known as the Vds. The maximum Vds value for this device is 500V.

When the MOSFET is operated in the linear region, a small amplitude signal at the gate terminal results in an amplified output at the drain terminal. This is known as Common Source, or Source Follower, amplification. When the MOSFET is operated in the saturation region, a large signal at the gate terminal can be used to switch a large current between the source and drain terminals. This is known as switching operation.

The typical operation of the IRF7463 is to switch a large current between the drain and source terminals, using a smaller gate signal. This is known as linear operation. The gate signal is applied to turn on the MOSFET, and the drain current is then limited to the chosen Vds. The length of the switch-on or turn-on time of the device is dependent on the gate signal, the Vds and the input capacitance of the device.

The switch-off or turn-off time of the device is dependent on the reverse recovery of the device, as well as the gate signal and the Vds. The gate circuit provides the voltage required to turn on and off the device, as the gate-source voltage Vgs must be greater than the threshold voltage Vth for the device to be turned on. The Vth of this particular device is 4V.

The IRF7463 has a superior performance in terms of thermal management and on resistance when compared to other power MOSFETs. This makes it well suited for applications requiring low power losses and high-efficiency operations. The device also offers a low parasitic junction capacitance, which makes it well suited for high-speed switching applications.

In conclusion, the IRF7463 is a single N-Channel MOSFET, designed for high-voltage applications. It is well suited for power supplies, DC-DC converters and motor control applications, due to its superior performance in terms of thermal management and on resistance. The device has a maximum Vds value of 500V and a typical Vth of 4V.

The specific data is subject to PDF, and the above content is for reference

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