| Allicdata Part #: | IRF7464-ND |
| Manufacturer Part#: |
IRF7464 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 200V 1.2A 8-SOIC |
| More Detail: | N-Channel 200V 1.2A (Ta) 2.5W (Ta) Surface Mount 8... |
| DataSheet: | IRF7464 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 5.5V @ 250µA |
| Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package: | 8-SO |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 2.5W (Ta) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 280pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 14nC @ 10V |
| Series: | HEXFET® |
| Rds On (Max) @ Id, Vgs: | 730 mOhm @ 720mA, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 1.2A (Ta) |
| Drain to Source Voltage (Vdss): | 200V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
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The power MOSFET, otherwise known as the Insulated Gate Field-Effect Transistor (IGFET), is an important component in the power electronics sector today. It is one of the most efficient power semiconductor components available and has a wide range of applications in motor drives, power supplies, and motor control. The IRF7464 is a high-performance, low-on-resistance, low-power and low-cost MOSFET from International Rectifier Corporation. It is an advanced power MOSFET which is ideally suited for applications demanding high-power handling and high speed switching operations.
Features of IRF7464
The IRF7464 MOSFET provides a range of features such as:
- It has a low RDS(on) so it can increase power conversion efficiency.
- It has a high-temperature operation and can be used for motor control and power supplies at high temperatures.
- It has a wide SOA (safe operating area) with excellent dv/dt rate handling capability.
- It has extremely low input and output capacitance.
- It has a wide VGS (gate-to-source voltage) range.
- It has enhanced avalanche capability.
- It has integrated ESD protection.
- It is available in two packages – D2-PAK and TO-247.
Working Principle of IRF7464
The basic working principle of the IRF7464 is quite simple. When the gate of the MOSFET is given a positive voltage, it creates a channel between the source and drain of the device which allows current to pass through. The current is controlled by the voltage applied to the gate. If the voltage applied to the gate is increased, the channel width increases and more current will pass through until the channel is saturated. In contrast, if the voltage is decreased, the channel will narrow and less current will pass through.
The IRF7464 also has a process-related parasitics, when the paraistics are changed over a period current variation is noticed in the source-drain. In order to control the resistance of the device a control circuit is used to keep the gate of the MOSFET at a fixed voltage regardless of the current variation.
Application Fields of IRF7464
The IRF7464 is widely used in power electronics due to its high-power handling and low RDS(on) capability. It is well suited for applications such as:
- Motor control circuits
- Switching power supplies
- DC motors
- UPS systems
- Battery charger circuits
- DC/DC converters
- Lighting control systems
- LED lighting systems
Conclusion
In conclusion, the IRF7464 is a high-performance, low-power and low-cost MOSFET from International Rectifier Corporation. It has a wide range of features, including a low RDS(on) and a wide SOA. It is well suited for a variety of applications, such as motor control circuits, switching power supplies, DC motors, UPS systems, and more. Its advanced performance and efficiency make it an ideal choice for power electronics applications.
The specific data is subject to PDF, and the above content is for reference
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IRF7464 Datasheet/PDF