IRF7464PBF

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

IRF7464PBF is a power MOSFET product from International Rectifier Corporation (IR). This is a 55 V N−channel, lumped gate charge MOSFET, specifically tailored for Power Management applications. It is part of the SmartPower product line and also a part of IR’s family of Logic Level Gate Drive MOSFETs.The product is designed to offer uncompromised performance in power management circuits. It provides drain-source breakdown voltage (BVDSS) of 55 V and drain current (ID) of 40 A. The MOSFET also employs current-compensated, temperature-dependent diode model to illustrate the associated reverse-body diode. This MOSFET also complies with RoHS directive even after the SMT process.A key attribute of this MOSFET is its low gate charge. This is achieved through the use of charge compensation techniques with gate dielectric layers and is further facilitated by the specially tailored leading-edge process technology. This helps reduce the switching losses and improves system efficiency. This MOSFET also features fast switching speeds and is excellent for high frequency applications.The IRF7464PBF MOSFET employs Logic Level Gate Drive, which enables operation of the power MOSFET with a low gate voltage. This feature improves the efficiency of the circuit by reducing power dissipated in the gate driver stage.The main application of the IRF7464PBF MOSFET is in power management circuits. It is a versatile device and is suitable for a range of power supply topologies, including switch mode, linear regulators, and hot swap controllers.The MOSFET is also suitable for use in DC-DC converters and in isolated DC-DC converters. Other applications include synchronous rectifiers, remote sensing and controlling, and battery management.The IRF7464PBF is suitable for use in a wide range of power supply networks and is ideal for low voltage applications. It also offers high current drive and low on-resistance.This MOSFET works through application of an electric current to the gate. When a positive voltage is applied to the gate, the resistance between the two source terminals is reduced. This modulated current is then passed through the two drain terminals.The IRF7464PBF is an ideal solution for high-performance power management applications. It offers superior performance and has been designed to reduce switching losses and improve system efficiency. It is robust and features low gate charge, fast switching speeds, and excellent thermal characteristics. Furthermore, it also complies with the RoHS directive.

The specific data is subject to PDF, and the above content is for reference