IRF7465PBF Allicdata Electronics
Allicdata Part #:

IRF7465PBF-ND

Manufacturer Part#:

IRF7465PBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 150V 1.9A 8-SOIC
More Detail: N-Channel 150V 1.9A (Ta) 2.5W (Ta) Surface Mount 8...
DataSheet: IRF7465PBF datasheetIRF7465PBF Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 280 mOhm @ 1.14A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Discontinued at Digi-Key
Packaging: Tube 
Description

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The IRF7465PBF is an advanced FET (Field-Effect Transistor) semiconductor product of International Rectifier Corp. It is a single N-Channel Enhancement-Mode MOSFET that is particularly useful in switching and power management applications. The IRF7465PBF is a high-power solution specifically designed to provide superior performance in medium power switching applications. It is manufactured using the most advanced process and materials available.

The IRF7465PBF has a Drain-Source voltage, VDS, rating of 30V and a Drain-Gate, VGS, rating of 12V maximum. The insulation dielectric between the gate and the source is greater than 50MΩ and when operated at the maximum voltage of 12V, the on-resistance of this device is typically 0.25Ω. This high-voltage, low-on-resistance MOSFET device makes it suitable for use in switching applications such as DC-DC converters and other high switching frequency applications.

The IRF7465PBF has an intrinsic body-diode that provides fast and reliable reverse-blocking capability. This means that the device can be used in applications in which the reverse voltage is large enough to cause the body-diode to switch. This provides complete control over the switching operation and enables the IRF7465PBF to be used more effectively in high voltage power conversion applications.

The IRF7465PBF is designed and manufactured to meet very stringent requirements for performance and reliability. It is an ideal component for high frequency and high voltage switching applications including DC-DC converters and other regulated power conversion circuits. The device comes in the TO-220 package, and it is available in a variety of voltage and power ratings for easy selection and placement in circuit designs.

The operating principle of the IRF7465PBF involves the application of an electric field across its gate and source terminals. This creates an electric field within the channel region of the MOSFET that increases as the gate voltage is increased. This electric field will cause a proportional increase in the current through the device, allowing the current to be controlled by the gate voltage. As the voltage is increased, the electric field will start pinching the current, thus reducing its power. When the voltage is cut off the electric field will no longer pinch the current, and the current will flow freely through the device.

The IRF7465PBF is an ideal component for DC-DC converters as well as other medium power switching applications. It is robust and is designed to offer superior performance. It is also energy efficient, making it an ideal choice for applications that require low power consumption. The device is also simple to design and use, making it a popular choice for engineers looking for efficient and reliable solutions for their switching applications.

The specific data is subject to PDF, and the above content is for reference

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