IRF7467 Allicdata Electronics
Allicdata Part #:

IRF7467-ND

Manufacturer Part#:

IRF7467

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 30V 11A 8-SOIC
More Detail: N-Channel 30V 11A (Ta) 2.5W (Ta) Surface Mount 8-S...
DataSheet: IRF7467 datasheetIRF7467 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 2V @ 250µA
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2530pF @ 15V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 4.5V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 12 mOhm @ 11A, 10V
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The IRF7467 is a four-channel self-biased high-side MOSFET switch. It is designed to replace power transistors and discrete MOSFETs in low-voltage DC-DC switch mode circuit designs. This MOSFET switch has an integrated high-side MOSFET, a positive gate voltage, a fixed delay and a detect interrupt circuit. This makes it particularly suitable for applications such as DC-DC converters and motor control switches.

Transistors, more specifically Field Effect Transistors (FETs) are devices that are used to control the flow of electricity. FETs operate by modulating the amount of electric charge that passes through them by using an external signal. MOSFETs (metal–oxide–semiconductor FETs) are a type of FET. The IRF7467 is a single MOSFET, meaning that it contains just one MOSFET.

The IRF7467 is designed to be used in the integration of high voltage power supplies. It is suitable for use in applications that require battery protection, over-voltage protection and cell balancing. Additionally, it can be used in a variety of complex power-conversion applications. The IRF7467 supports up to 15V for applications ranging from general-purpose switching to battery protection and detection.

The IRF7467 is unique in its ability to control the power of a circuit by using a self-biased lower gate voltage in order to reduce power consumption. This lower gate voltage works in combination with the detect interrupt circuit which reduces current consumption and increases battery life. Additionally, it has a fixed delay circuit which allows for more precise control and prevents over-voltage thrashing.

The self-bias MOSFET switch provides a more efficient solution than traditional switch transistors. This is due to the self-biasing feature which reduces power consumption, making the IRF7467 an ideal choice for applications where power consumption is a major concern. The self-biasing feature is also beneficial for redundant circuits; when one transistor fails, the other can still control the circuit. This allows for the reliable operation of a circuit even when faced with unforeseen conditions. The integrated MOSFET also allows for a much simpler design and implementation for applications that require a reliable high-side MOSFET switch.

In conclusion, the IRF7467 is a versatile and efficient MOSFET switch designed for a range of applications. It offers a self-biasing feature which reduces power consumption, and a detect interrupt circuit which increases battery life. Additionally, it has a fixed delay circuit which allows for more precise control. These features make it ideal for battery protection and other complex power-conversion applications.

The specific data is subject to PDF, and the above content is for reference

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