| Allicdata Part #: | IRF7467TR-ND |
| Manufacturer Part#: |
IRF7467TR |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 30V 11A 8-SOIC |
| More Detail: | N-Channel 30V 11A (Ta) 2.5W (Ta) Surface Mount 8-S... |
| DataSheet: |  IRF7467TR Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Vgs(th) (Max) @ Id: | 2V @ 250µA |
| Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package: | 8-SO |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 2.5W (Ta) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 2530pF @ 15V |
| Vgs (Max): | ±12V |
| Gate Charge (Qg) (Max) @ Vgs: | 32nC @ 4.5V |
| Series: | HEXFET® |
| Rds On (Max) @ Id, Vgs: | 12 mOhm @ 11A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 2.8V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 11A (Ta) |
| Drain to Source Voltage (Vdss): | 30V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
Description
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The IRF7467TR is an N-channel MOSFET produced by International Rectifier. This device is suitable for use in a variety of power-switching applications, including motor control and switching power supplies. It also has a wide range of other uses in industrial, automotive, and consumer electronics. The device is a single package, hermetically sealed and with a built-in thermal protection feature. The IRF7467TR has a fast switching speed and high input capacitance, making it ideal for power applications which require fast response times and high power stability. It also has a high blocking voltage and a low threshold voltage for lower power consumption. The IRF7467TR is a single N-Channel MOSFET in a TO-220 package. It features a low on-state resistance of 2.45mΩ @Vds = 5V and a current capability of 14.5A at 25°C. The N-channel conduction makes the device ideal for applications that require low voltage drop and low power consumption. The device also has a low gate-source capacitance of 140 pF and a low gate-drain capacitance of 25 pF. It is capable of operating at very high temperatures, up to 175°C. The IRF7467TR is designed for use in power switching applications, such as motor control, switching power supplies, DC-DC converters and motor drivers. The device can also be used in power-supply regulation, motor control and circuit protection. The device can be used in both low and high power applications, due to its low on-state resistance and its ability to operate at high temperatures. The device has very low gate capacitances, which make it ideal for high frequency applications. The IRF7467TR is a relatively simple device to work with, and can be connected to external components or directly to the system power source. In order to connect the device to the system power source, the gate must be connected to the source via a resistor and the drain must be connected to the load. The device must be protected from excessive current, as the gate-to-source voltage must be kept below 10V. The IRF7467TR is typically used in applications that require fast response times and high power stability. Its low on-state resistance allows for a low voltage drop and, therefore, low power consumption. The fast switching time, coupled with the low gate capacitance, makes the device ideal for use with high frequency applications. In addition, the high blocking voltage and low threshold voltage provide excellent protection for the device against overloads. In summary, the IRF7467TR is a single N-Channel MOSFET with a low on-state resistance and good high temperature performance. It is ideal for a variety of applications, including motor control, switching power supplies and DC-DC converters. With its low gate-source and gate-drain capacitance, it is suitable for high-frequency applications where a fast response time is required. It also provides excellent protection against excesses due to its high blocking voltage and low threshold voltage.
The specific data is subject to PDF, and the above content is for reference
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