| Allicdata Part #: | IRF7468TR-ND |
| Manufacturer Part#: |
IRF7468TR |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 40V 9.4A 8-SOIC |
| More Detail: | N-Channel 40V 9.4A (Ta) 2.5W (Ta) Surface Mount 8-... |
| DataSheet: | IRF7468TR Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 2V @ 250µA |
| Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package: | 8-SO |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 2.5W (Ta) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 2460pF @ 20V |
| Vgs (Max): | ±12V |
| Gate Charge (Qg) (Max) @ Vgs: | 34nC @ 4.5V |
| Series: | HEXFET® |
| Rds On (Max) @ Id, Vgs: | 15.5 mOhm @ 9.4A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 9.4A (Ta) |
| Drain to Source Voltage (Vdss): | 40V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
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The IRF7468TR is a type of Power FET (Field Effect Transistor) that is specifically designed as a single N-channel MOSFET. It is intended for applications such as high frequency power converters, smart power switches, low capacitance device protection and general purpose DC-DC converters. The IRF7468TR is offered in the SSOP-8 package with the package fully meeting the MSL3 requirements.
The IRF7468TR is a depletion mode transistor, meaning that it is in the fully turned-on state in the absence of any additional voltage. This makes it ideal for applications requiring continuously-on parts such as switching regulators and DC-DC converters. It is also useful for applications that require extra voltage drop and power savings, such as automotive lighting applications. The IRF7468TR is capable of handling currents up to 33A and breakdown voltages up to 10V, making it an ideal choice for higher current applications.
The IRF7468TR is capable of switching frequencies up to 15kHz and its low gate charge of 8nC allows it to respond quickly to changes in input signals. Its thermal performance is improved by its high thermal resistance of only 2.6°C/W, making it suitable for use in high temperature environments. Additionally, its low on-state resistance of 0.55Ω allows it to operate at high efficiency.
The IRF7468TR uses MOSFET technology to implement its functionality. Specifically, it uses an insulated gate or "gate" transistor that provides flexibility and improved performance over traditional junction FETs, while still utilizing size and cost savings afforded by traditional implants. The gate transistor allows the IRF7468TR to be voltage controlled in order to adjust the current between the drain and source. The insulation also eliminates potential shorts caused by gate-source capacitance.
The IRF7468TR utilizes a specific type of structure known as an Enhanced Punch Through (EPT) cell. This structure results in very low on-resistance yet very fast switching times, allowing for higher current and frequency operation. The low on-resistance also results in improved efficiency, allowing for more power savings.
The IRF7468TR offers several key features and benefits for a wide variety of applications. It is a versatile device that offers an exceptional combination of low on-resistance, low gate charge, high electrical breakdown voltage and high switching frequency, making it an ideal choice for high frequency, current handling and thermal performance applications. The low gate charge and reduced switching times allow for extremely fast response times and low power consumption, making it especially suitable for use in power management and smart power applications.
The specific data is subject to PDF, and the above content is for reference
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IRF7468TR Datasheet/PDF