IRF7469 Allicdata Electronics
Allicdata Part #:

IRF7469-ND

Manufacturer Part#:

IRF7469

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 40V 9A 8-SOIC
More Detail: N-Channel 40V 9A (Ta) 2.5W (Ta) Surface Mount 8-SO
DataSheet: IRF7469 datasheetIRF7469 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 3V @ 250µA
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 20V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 17 mOhm @ 9A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The IRF7469 is a high-voltage, high-speed N-Channel MOSFET from a company known as International Rectifier. This device is used in a variety of applications, including power conversion and voltage regulation. It is particularly well suited for use in high-power, high-frequency switching applications due to its rugged construction, low gate charge, and fast switching times.

The IRF7469 is a single-pole, single-throw device. It is built using an N-channel enhancement-mode process, with a drain-to-source voltage rating of 500V, and a maximum drain current rating of 45A. The device also has a fast switching time, with a turn-on delay time of only 37nsec. The device is well suited for use in high-frequency switching applications, such as switched-mode power supplies and motor control applications.

The IRF7469 is constructed using an N-channel enhancement-mode process. This type of process allows the device to be driven with a gate voltage that is lower than the drain-to-source voltage. The gate voltage is typically held between the 3V to 5V range, which is relatively low compared to the 500V maximum drain-to-source voltage of the device. This allows the device to be easily driven from low power logic or switching circuits.

The IRF7469 is well suited for use in high frequency, high power applications. The device has a low maximum gate charge of 42nC, which allows it to switch very quickly. It also has a high power handling capability, with a maximum Drain-to-Source voltage rating of 500V, and a maximum drain current rating of 45A.

The IRF7469 is also well suited for use in applications that require high voltage switching and a fast response time. The device has a very fast turn-on delay time of 37nsec, which allows it to switch almost instantaneously. This makes it ideal for applications where high frequencies, low losses, and fast responses are required.

In summary, the IRF7469 is a high-voltage, high-speed N-Channel MOSFET. It is built using an N-channel enhancement-mode process, which allows it to be driven with a gate voltage that is lower than the drain-to-source voltage. The device has a low maximum gate charge of 42nC, and a high power handling capability of 500V/45A, making it well suited for use in high frequency, high power applications. In addition, the device has a very fast turn-on delay time of 37nsec, which allows it to switch almost instantaneously. The IRF7469 is therefore well suited for use in applications that require high voltage switching and a fast response time.

The specific data is subject to PDF, and the above content is for reference

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