Vgs(th) (Max) @ Id:	3V @ 250µA
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:	8-SO
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	2.5W (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	2000pF @ 20V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	23nC @ 4.5V
Series:	HEXFET®
Rds On (Max) @ Id, Vgs:	17 mOhm @ 9A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	9A (Ta)
Drain to Source Voltage (Vdss):	40V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Discontinued at Digi-Key
Packaging:	Tube

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IRF7469PBF Application Field and Working Principle

Introduction

IRF7469 is a single N-Channel Enhanced High Voltage Power MOSFET, made with the advanced PowerTrench process. It features breakdown voltage up to 500 V and on-state resistance down to 0.31 Ω. The device also has enhanced body diode dV/dt capability compared to similar products, making it optimal for up to 500V applications requiring high current carrying capacity such as power management in DC/DC converters, lamp ballast and general motor drive applications.

Features

• Low On-Resistance: 0.31Ω
• 500V Breakdown Voltage(VDSS)
• Support up to 110A of drain current(ID)
• Low gate charge(Qg): 8nC
• High avalanche energy(EAS): 230mJ

Applications

• UPS System
• DC2DC Converter
• Power Supply
• Power Management
• LED Lighting
• Motor Driver

Working Principle

The IRF7469 is a type of FET or MOSFET (metal oxide semiconductor field-effect transistor) that is used in applications requiring a high voltage breakdown. It is an n-channel device, meaning that current flows in one direction through the device when the gate voltage is higher than the source terminal, allowing electrons to flow from the source to the drain. This device is made of an oxide-insulated anode and cathode, and a conductive gate, which controls the current flow.The gate is an insulated layer of metal oxide in contact with the source and drain metals of the device. When a voltage is applied to the gate, this insulator layer prevents current flow. As the applied gate voltage increases, so does the electrostatic force, eventually overcoming the insulating layer and allowing current to flow between the source and drain. This principle is used in the IRF7469 to control the current flow in high voltage applications.The IRF7469 is highly efficient due to its low on-resistance and high avalanche energy. The low on-resistance lets it deliver higher currents than other devices with the same breakdown voltage. The avalanche energy also allows the device to be used in applications where higher transient voltages are present.

Conclusion

In conclusion, the IRF7469 is an enhanced, high voltage N-Channel MOSFET that is well suited for applications that require a high voltage breakdown and high current carrying capacity. The device features a low on-resistance, high avalanche energy, and low gate charge, making it a highly efficient and reliable solution for applications such as power management in DC/DC converters, LED lighting, and motor driver applications.

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