IRF7470PBF

Vgs(th) (Max) @ Id:	2V @ 250µA
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:	8-SO
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	2.5W (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	3430pF @ 20V
Vgs (Max):	±12V
Gate Charge (Qg) (Max) @ Vgs:	44nC @ 4.5V
Series:	HEXFET®
Rds On (Max) @ Id, Vgs:	13 mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On):	2.8V, 10V
Current - Continuous Drain (Id) @ 25°C:	10A (Ta)
Drain to Source Voltage (Vdss):	40V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Discontinued at Digi-Key
Packaging:	Tube

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IRF7470PBF Application Field and Working Principle

IRF7470PBF is an N-Channel MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) manufactured by International Rectifier Corporation. It features extremely low on-state resistance and is suitable for power switching applications in a variety of applications including power supply, motor control and telecom.The IRF7470PBF is a semiconductor device, which means it is an electronic component used to control the flow of current in an electronic circuit. The base layer is composed of Si (silicon) which is a semiconductor material. On top of this silicon layer, two contacts, called “source” and “drain”, are placed. A gate contact is placed in between the source and drain, allowing it to control the current flow and also influence the voltage across the source and drain terminals. Since the IRF7470PBF is a MOSFET, it works by creating a field between the gate and source which controls the current flow. When the gate voltage is positive relative to the source, the channel of electrons between the source and drain will be widened, thus allowing more current to flow. On the other hand, when the gate voltage is negative relative to the source, the channel will be narrowed, reducing the current flow. The IRF7470PBF is specifically designed for power switching applications. It is made from an advanced silicon based process utilizing an N-Channel MOSFET structure, which enables low on-state resistance. Additionally, this low resistance also allows for higher current capacities, making it ideal for power switching applications. The IRF7470PBF is also highly configurable, allowing for a wide range of operating parameters. These parameters include the gate threshold voltage, breakdown voltage, drain current, gate capacitance and on-resistance. It also has a maximum junction temperature of 150 degrees Celsius, making it suitable for high temperature applications. The IRF7470PBF is suitable for a variety of applications including motor control and power supply. It can be used in power management ICs to provide switch control signals, allowing power to be turned on or off as needed. It can also be used to control the speed of a motor, allowing the motor to accelerate or decelerate easily. In conclusion, the IRF7470PBF is a MOSFET with low on-state resistance suitable for power switching applications. It offers high current capabilities and is highly configurable, making it ideal for a range of applications such as motor control, power supply, and power management ICs.

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