IRF7470TR Allicdata Electronics
Allicdata Part #:

IRF7470TR-ND

Manufacturer Part#:

IRF7470TR

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 40V 10A 8-SOIC
More Detail: N-Channel 40V 10A (Ta) 2.5W (Ta) Surface Mount 8-S...
DataSheet: IRF7470TR datasheetIRF7470TR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 2V @ 250µA
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3430pF @ 20V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 4.5V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 13 mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The IRF7470TR is one of the metal oxide semiconductor field effect transistors (MOSFET). These are the primary switching devices in a variety of applications, ranging from analog circuit designs to digital systems. This particular MOSFET is a single type, meaning that it has only two terminals – drain and source. In general, transistors are used in circuits to either switch or amplifying signals. A MOSFET can be used as a switch as it can be easily and quickly turned on and off.

When it comes to the working principle of the IRF7470TR, it is quite simple. A voltage is applied to the gate and this voltage creates an electric field in the region between the source and the drain. As this field increases, the electrons in the source region are pushed away from the gate. The resulting depletion region creates a region of very low resistance and as a result, current is allowed to flow from the source to the drain. The strength of the electric current is determined by the amount of voltage applied to the gate and the source-drain capacitance of the MOSFET.

The IRF7470TR MOSFETs are ideal for use in applications where high switching speeds and low power dissipation are required. A few typical applications of these MOSFETs include audio amplifiers, high-speed analog-to-digital converters, motor drives and power supplies. The gate of the device can be easily switched on and off, ensuring good efficiency and a fast rise and fall times during switching.

Due to its low on resistance and fast switching performance, one of the main applications of the IRF7470TR is in power management. These MOSFETs are especially effective in the full range of low voltage power conversion, from low to high power levels. They are also suitable for use in battery management, secondary side synchronous rectification, high-frequency DC-DC converters and active circuit breakers.

One of the primary advantages of the IRF7470TR MOSFET is its no-gate drive voltage. This means that there is no need for a gate driver, which saves on total system cost and board space. Additionally, the device is housed in a standard TO220 and D2Pak plastic packages which are suitable for a variety of applications.

The IRF7470TR is a versatile MOSFET that can be used in a wide variety of applications. With its fast switching speed, low power dissipation and no-gate drive voltage requirement, it is ideal for use in a number of power management applications and is suitable for use in both industrial and consumer electronics.

The specific data is subject to PDF, and the above content is for reference

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