IRF7471TR Allicdata Electronics
Allicdata Part #:

IRF7471TR-ND

Manufacturer Part#:

IRF7471TR

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 40V 10A 8-SOIC
More Detail: N-Channel 40V 10A (Ta) 2.5W (Ta) Surface Mount 8-S...
DataSheet: IRF7471TR datasheetIRF7471TR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 3V @ 250µA
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2820pF @ 20V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 4.5V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 13 mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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IRF7471TR is a widely used type of power metal–oxide–semiconductor field-effect transistor (MOSFET). This type of transistor is used in a variety of applications, including power switching, rectification, High side load switch, and low-side driver circuit. This article will provide a deeper understanding of IRF7471TR’s application fields and working principle.

Application field of IRF7471TR
The IRF7471TR is a rugged MOSFET, with a very impressive current-carrying rated of 50A and a voltage rating of 500V. This makes it an ideal device for a range of power supply and motor drive systems, such as electric vehicles, home appliances, and robotic systems. It can also be used in high-frequency solenoid control, and in other circuits that require both low on-resistance and high electric field strength. Furthermore, due to its low Gate threshold voltage and low stand-by current, the IRF7471TR is particularly useful for low-power applications.

Working Principle of IRF7471TR
The IRF7471TR is a N-Channel MOSFET with a ‘MOS Gate’ control. This means that the current flow between the drain and source is controlled by the input voltage applied to the Gate (VG). At high VG, the internal MOS channel is opened, allowing the drain to source current to flow. At low VG, the MOS channel is closed, so no current flows.

The IRF7471TR also features an enhanced body diode, which enables the MOSFET to be used in both Step-up and Step-down configurations. This is particularly useful for battery charging or discharging, or when used in an LED display to provide robust and efficient power regulation. The body diode also increase the switching speed of the device, and ensures that it can effectively suppress noise.

To summarize, the IRF7471TR is a robust and versatile MOSFET device, particularly suitable for power switching and rectification applications, and low-power control circuits. Its low Gate threshold voltage, low standby current, and enhanced body diode make it ideal for a range of power supply and motor drive systems, including home appliances, robotic systems, and electric vehicles.

The specific data is subject to PDF, and the above content is for reference

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