
Allicdata Part #: | IRF7492PBF-ND |
Manufacturer Part#: |
IRF7492PBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 200V 3.7A 8-SOIC |
More Detail: | N-Channel 200V 3.7A (Ta) 2.5W (Ta) Surface Mount 8... |
DataSheet: | ![]() |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1820pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 59nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 79 mOhm @ 2.2A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 3.7A (Ta) |
Drain to Source Voltage (Vdss): | 200V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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IRF7492PBF is a type of single N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) commonly used by engineers and technicians. Constructed with a silicon substrate and a specially designed gate oxide layer, these MOSFETs are able to handle voltages above 100 Volts, making them ideal for power supplies, driver circuits, and embedded control systems. Moreover, they provide an incredibly low on-resistance, up to 70mOhms, so they can be used to produce switching frequencies in the kHz range with amazing efficiency.
Due to its impressive capabilities, the IRF7492PBF is frequently used in a wide range of applications. Its primary uses are in low-voltage and low-current operations, such as the switching of high-current loads. Because of its small footprint, it is commonly found in consumer electronics, from laptops to breakthroughs in consumer information technology. Furthermore, it is extensively used in automotive, military and aerospace industries, because of its high power capabilities. It can also be used as an on-chip amplifier by employing it in several audio amplification circuits.
The practical operation of an IRF7492PBF is based on the MOS field effect. Inside the device, there is a silicon gate oxide layer which, when given a voltage, changes its electrical characteristics. This is what enables it to control high currents. When the gate voltage is higher than the source voltage, the device is said to be in the "on" state and allows current to pass through it. When the gate voltage is lower than the source voltage, the device is said to be in the "off" state and will not conduct current.
Due to its incredibly low on-resistance, the IRF7492PBF can dissipate very little heat, making it suitable for power circuits with high power consumption rates. Because of its wide application range, it is also widely used for power management, enabling extremely efficient conversion of electricity into useful electrical power. Additionally, it is an excellent choice for designers looking to keep losses to a minimum due to switching losses.
The IRF7492PBF is an excellent choice for engineers looking for a reliable and versatile MOSFET for use in their projects. With its wide range of applications and its low on-resistance, it is the perfect choice for power circuits, embedded control systems and audio amplification. Its MOS field-effect structure allows it to power high current loads with incredible efficiency, allowing it to be used in many challenging projects in the automotive, military and aerospace market.
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