Allicdata Part #: | IRF7493PBF-ND |
Manufacturer Part#: |
IRF7493PBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 80V 9.3A 8-SOIC |
More Detail: | N-Channel 80V 9.3A (Tc) 2.5W (Tc) Surface Mount 8-... |
DataSheet: | IRF7493PBF Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1510pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 53nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 15 mOhm @ 5.6A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 9.3A (Tc) |
Drain to Source Voltage (Vdss): | 80V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Discontinued at Digi-Key |
Packaging: | Tube |
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IRF7493PBF is a single-differential P-channel MOSFET device manufactured by International Rectifier (IR). It features a low on-resistance and ESD protection capabilities up to ±23 kilovolts, making it an ideal choice for power MOSFET applications. The device is rated at 6-30 volts, with a maximum drain current of 10A.
The IRF7493PBF is designed for applications where space and cost are critical, such as portable and consumer electronics. It is ideal for power MOSFET applications where low on-resistance and ESD protection are required. The device is available in the SOP-8 package and is RoHS compliant.
Working Principle:
The IRF7493PBF is a single-differential P-channel MOSFET, meaning that it uses a single-gate and a drain, with current flowing from the source to the drain when a voltage is applied to the gate. The device has a low on-resistance and ESD protection capabilities up to ±23 kilovolts, allowing it to be used in a variety of power MOSFET applications. The device is rated at 6-30 volts, with a maximum drain current of 10A.
When a voltage is applied to the gate, the electric field between the gate and the drain penetrates the silicon-gate region of the transistor, resulting in the formation of a channel in the form of a metal-oxide-semiconductor (MOS) structure. This channel is a current path through which electrons can flow between the source and the drain, resulting in the flow of current. The drain current is proportional to the voltage applied to the gate, and is controlled by the gate voltage.
The IRF7493PBF also features a low on-resistance, which is typically less than 2KΩ. The on-resistance of the device is a major factor in determining the power loss of any power MOSFET application, and the low on-resistance of the IRF7493PBF makes it an ideal choice for such applications. The device is also designed for applications where ESD protection is required, with a maximum ESD tolerance of ±23 kilovolts.
Application Field:
The IRF7493PBF is designed for applications where space and cost are critical, such as portable and consumer electronics. It is ideal for power MOSFET applications, where low on-resistance and ESD protection are required. The device is available in the SOP-8 package, making it suitable for use in a variety of PC board layouts, and is RoHS compliant.
The device is also suitable for use in a wide range of applications, such as DC-DC converters, power inverters, portable chargers, and battery powered systems. It can also be used in automotive applications, such as power seats, power windows, and power door locks. Additionally, the device is suitable for audio switching, high-speed synchronous rectification, and hot-swap applications.
The IRF7493PBF is a highly reliable device, and its ESD protection and low on-resistance make it an ideal choice for power MOSFET applications. The device is available in the SOP-8 package and is RoHS compliant, making it suitable for use in a variety of PC board layouts.
The specific data is subject to PDF, and the above content is for reference
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