IRF7495TRPBF Allicdata Electronics
Allicdata Part #:

IRF7495TRPBFTR-ND

Manufacturer Part#:

IRF7495TRPBF

Price: $ 0.27
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 100V 7.3A 8-SOIC
More Detail: N-Channel 100V 7.3A (Ta) 2.5W (Ta) Surface Mount 8...
DataSheet: IRF7495TRPBF datasheetIRF7495TRPBF Datasheet/PDF
Quantity: 1000
1 +: $ 0.27200
10 +: $ 0.26384
100 +: $ 0.25840
1000 +: $ 0.25296
10000 +: $ 0.24480
Stock 1000Can Ship Immediately
$ 0.27
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1530pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 22 mOhm @ 4.4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The IRF7495TRPBF is a single-channel MOSFET transistor designed for a wide range of applications. As it is a P-channel device, it is most commonly used in high-side switch configurations where the supply voltage of the load is higher than the control voltage. It is available in a variety of packages, depending on the level of packaging needed. This device is most commonly used in LED lighting, switching power supplies, motor control, and automotive environments.

The Working Principle

The IRF7495TRPBF operates using the principle of the MOSFET, which stands for Metal Oxide Semiconductor Field Effect Transistor. This type of transistor is a 3-terminal device composed of a source, drain and gate electrodes. The source and drain are connected to the external circuit while the gate controls the current flowing through the external circuit. In the case of the IRF7495TRPBF, the polarity of the channel is P-type, meaning that current flows from the source to drain when the gate is open and no current passes when the gate is closed.

The Device Structure

The IRF7495TRPBF is a single-channel MOSFET, as opposed to a dual or triple-channel MOSFET. The two major parts of the device are the silicon die and the package. The silicon die is an active area that contains transistors, transistors channels, capacitors and resistors, among other components. It is connected to the package, which contains the pins used to connect the device to the external circuit. The pins are designed to withstand high voltages and temperatures, as well as to provide electrical connections for the device.

Device Applications

The IRF7495TRPBF can be found in many different applications, depending on the levels of power and short-circuit withstand needed. The wide operating temperature range of -55°C to +175°C makes the device suitable for automotive, military and industrial applications. The device also has a low gate-source voltage threshold, making it suitable for switch-mode applications. Common applications include DC-DC Converters, Polarity Reversal Circuit, Load Switching, and Motor Control.

Advantages

The IRF7495TRPBF has several advantages over other types of transistors. The high voltage and temperature ratings make it suitable for use in harsh environments. The small size of the device allows it to be used in small packages and makes it easy to integrate into other applications. The low gate-source voltage threshold makes it suitable for switch-mode applications. Finally, the P-channel design of the device allows for high-side load switching.

Conclusion

The IRF7495TRPBF is a single-channel MOSFET transistor designed to provide reliable operation in a variety of high-performance applications. It is suitable for use in automotive, military, and industrial environments due to its wide operating temperature range of -55°C to +175°C. The device can be used in switch-mode applications due to its low gate-source voltage threshold and it is suitable for high-side load switching due to its P-channel design.

The specific data is subject to PDF, and the above content is for reference

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