
Allicdata Part #: | IRF7534D1PBF-ND |
Manufacturer Part#: |
IRF7534D1PBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET P-CH 20V 4.3A MICRO-8 |
More Detail: | P-Channel 20V 4.3A (Ta) 1.25W (Ta) Surface Mount M... |
DataSheet: | ![]() |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 1.2V @ 250µA |
Package / Case: | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
Supplier Device Package: | Micro8™ |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.25W (Ta) |
FET Feature: | Schottky Diode (Isolated) |
Input Capacitance (Ciss) (Max) @ Vds: | 1066pF @ 10V |
Vgs (Max): | ±12V |
Gate Charge (Qg) (Max) @ Vgs: | 15nC @ 5V |
Series: | FETKY™ |
Rds On (Max) @ Id, Vgs: | 55 mOhm @ 4.3A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 4.3A (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The IRF7534D1PBF is a N-channel Enhanced Mode Power MOSFET designedfor load switch, low frequency power management and protectionapplications. This device is a part of a family of enhancement-modedevices optimized for low RDS(on), fast switching speed, low input andoutput capacitance. The IRF7534D1PBF is particularly suited for lowcurrent charging solutions and can be used for a wide variety ofapplications.
The IRF7534D1PBF is a single N-Channel Enhancement-Mode Field-EffectTransistor (FET) suitable for use as a load switch, low frequency powermanagement and protection applications. The device is optimized for lowRDS(on), high speed switching and low input and output capacitance. TheIRF7534D1PBF is particularly suitable for low current chargingsolutions. The device has an active area of 10 um x 20 um, and isdesigned to handle peak currents up to 1A.
The working principle of the IRF7534D1PBF is based on the electricalproperties of MOSFETs, a type of transistor. MOSFETs, or metal-oxide-semiconductor field-effect transistors, are a type of transistor that uses two electrodes, a source and a drain, to control the flow of electricity. The gate – the third electrode – is responsible for controlling the current flow between the source and the drain. When a positive voltage is applied to the gate, current flows from the source to the drain. Conversely, when a negative voltage is applied, current flows from the drain to the source.
In the IRF7534D1PBF, the gate is connected to the electrode on the top of the device and is actively driven by the base voltage. When a positive voltage is applied to the gate, current flows from the source to the drain. The current is then held at the drain by the current source and the IRF7534D1PBF acts as a low-impedance load switch. When a negative voltage is applied, the current is forced back to the source, and the device acts as a current sink.
The IRF7534D1PBF is suitable for a wide range of applications, primarily those associated with low current charging solutions. Examples include DC-DC converters, power management in portable devices, and other low current applications. The device also has applications in protecting against overvoltages, overcurrents and short circuits. The IRF7534D1PBF has an integrated ESD protection circuit, which provides protection against electrostatic discharges.
The IRF7534D1PBF is an excellent device for a wide range of applications due to its low RDS(on), fast switching speed, and low input and output capacitance. The integrated ESD protection circuit, while not mandatory, provides additional reliability and protection against hostile environments. The device is particularly useful for low current charging solutions, as well as other low current applications. With its compact size and high efficiency, the IRF7534D1PBF is an excellent option for many portable and electronic applications.
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