
Allicdata Part #: | IRF7601PBF-ND |
Manufacturer Part#: |
IRF7601PBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 20V 5.7A MICRO-8 |
More Detail: | N-Channel 20V 5.7A (Ta) 1.8W (Ta) Surface Mount Mi... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 700mV @ 250µA |
Package / Case: | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
Supplier Device Package: | Micro8™ |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.8W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 650pF @ 15V |
Vgs (Max): | ±12V |
Gate Charge (Qg) (Max) @ Vgs: | 22nC @ 4.5V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 35 mOhm @ 3.8A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 2.7V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 5.7A (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Discontinued at Digi-Key |
Packaging: | Tube |
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The IRF7601PBF is a high-power, low-voltage, N-channel MOSFET designed to provide high performance in a variety of electrical applications. It combines a low on-resistance dynamic characteristics, a low drain-source capacitance, and a low gate charge to enhance the functionality of applications. The IRF7601PBF is the most powerful of the IRF7501 series, which have many applications in the field of power management, particularly in the automotive industry.
The IRF7601PBF has a low drain-source on-resistance of only 75 mΩ and a fast switching speed, enabling it to be used in high-efficiency, high-speed circuits. It has a drain-source voltage of 600V and a drain current of 12A meanwhile. The on-state resistance is 75 mΩ and its threshold voltage is between 0.8V and 4V. The IRF7601PBF also has a low gate capacitance and low gate-source capacitance to support high-speed operation without additional gate drive components.
The IRF7601PBF is designed for a variety of applications, including motor control and power management. It is commonly used to control the switching of power transistors in such applications as motor control, Power MOSFET switches, and IGBTs in applications such as motor drive inverters and solar power inverters.
The IRF7601PBF operates by means of the Gate Effect. When a voltage difference is created between the Gate and Source terminals, a high level of current flow is induced in order to regulate the output power level. When the voltage differences are greater, greater current will flow through the transistor, enabling it to switch faster. When the voltage is less, less current will flow, allowing it to be used in circuits requiring longer cycle times.
In addition to its superior switching capabilities, the IRF7601PBF also features a low thermal resistance between the Drain and Source terminals and a rugged construction to enable the device to operate effectively in environments of up to 85°C or higher. This is suitable for a variety of automotive and industrial applications, such as IGBTs, heat pumps, and other power switches.
The IRF7601PBF is an excellent choice for applications requiring high performance and low voltage operation. With its low drain-source on-resistance, low gate capacitance, and fast switching speed, it is a great choice for motor control and power management applications. In addition, its rugged design ensures reliable operation in extreme environmental conditions, making it suitable for a variety of automotive, industrial, and energy applications. This makes the IRF7601PBF an ideal choice for any application requiring high performance, low voltage operation, and reliable operation in a wide range of conditions.
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