| Allicdata Part #: | IRF7607-ND |
| Manufacturer Part#: |
IRF7607 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 20V 6.5A MICRO-8 |
| More Detail: | N-Channel 20V 6.5A (Ta) 1.8W (Ta) Surface Mount Mi... |
| DataSheet: | IRF7607 Datasheet/PDF |
| Quantity: | 1000 |
Specifications
| Vgs(th) (Max) @ Id: | 1.2V @ 250µA |
| Package / Case: | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
| Supplier Device Package: | Micro8™ |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 1.8W (Ta) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1310pF @ 15V |
| Vgs (Max): | ±12V |
| Gate Charge (Qg) (Max) @ Vgs: | 22nC @ 5V |
| Series: | HEXFET® |
| Rds On (Max) @ Id, Vgs: | 30 mOhm @ 6.5A, 4.5V |
| Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C: | 6.5A (Ta) |
| Drain to Source Voltage (Vdss): | 20V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
Description
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IRF7607 is a fully-depleted advanced trench metal oxide semiconductor field effect transistor, more commonly known as MOSFET, which is widely used in various applications because of its numerous advantages. It is a single gate device, meaning that there is only one gate electrode connected to the semiconductor. The IRF7607 is quite small, with a size of only 435 um in length, which makes it a great choice for applications where the space for components is limited. It also has a very low on-state resistance, making it a great choice for high-frequency applications.The IRF7607 works by allowing current to flow between two terminals, namely the source and the drain, when a voltage is applied to the gate terminal. In order to do so, the gate terminal needs to be slightly more positive than the source voltage. When the voltage differential is increased, the current conducted by the device increases accordingly. This is due to the formation of an inversion layer at the gate, which increases the area of the channel and thus enhances the current conduction. In addition, the IRF7607 has a lower gate-source capacitance, making it more suitable for high-frequency applications.Aside from its low on-state resistance and small size, the IRF7607 also offers a wide range of advantages. First, it is highly efficient as it can operate over a wide temperature range and maintains a high degree of consistency. Second, it is highly reliable and has a long lifetime, making it a great choice for applications that require long-term stability. Finally, the device itself is relatively compact, making it a great choice for miniaturized electronic systems.The IRF7607 has a number of applications, ranging from portable electronics to the automotive industry. It is used in motor controllers, power inverters, power supplies, and in a wide range of other applications. In the automotive industry, it is often used in electric power steering systems, alternators, fuel pumps, starter motors, and in a wide range of other systems. In portable electronics, the IRF7607 is often used in cell phones, tablets, and other handheld devices. In addition, it is also used in a wide range of industrial and commercial applications, such as solar panel controllers, solar inverters, and LED power supplies.In conclusion, the IRF7607 is a highly efficient and reliable MOSFET which is used in a wide variety of applications. It is a single gate device which is quite small and offers a low on-state resistance and gate-source capacitance. Moreover, it operates over a wide temperature range, maintains a high degree of consistency, and has a long lifetime. All of these features combine to make it a great choice for a variety of applications, from automotive to portable electronics.
The specific data is subject to PDF, and the above content is for reference
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IRF7607 Datasheet/PDF