| Allicdata Part #: | IRF7701TR-ND |
| Manufacturer Part#: |
IRF7701TR |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET P-CH 12V 10A 8-TSSOP |
| More Detail: | P-Channel 12V 10A (Tc) 1.5W (Ta) Surface Mount 8-T... |
| DataSheet: | IRF7701TR Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 1.2V @ 250µA |
| Package / Case: | 8-TSSOP (0.173", 4.40mm Width) |
| Supplier Device Package: | 8-TSSOP |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 1.5W (Ta) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 5050pF @ 10V |
| Vgs (Max): | ±8V |
| Gate Charge (Qg) (Max) @ Vgs: | 100nC @ 4.5V |
| Series: | HEXFET® |
| Rds On (Max) @ Id, Vgs: | 11 mOhm @ 10A, 4.5V |
| Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C: | 10A (Tc) |
| Drain to Source Voltage (Vdss): | 12V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | P-Channel |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
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The IRF7701TR is a type of metal-oxide-semiconductor field-effect transistor (MOSFET). As an enhancement-mode device, the transistor is ideal for use in applications ranging from commercial systems to consumer electronics. The IRF7701TR is part of the Single FETs family, and is a high-frequency, high-current, low-voltage transistor with an improved on-resistance-to-gate charge ratio.
The IRF7701TR operates by utilizing the flow of negative electrical charge, known as the Drain Current (ID). In order to do so, the transistor is connected to a Gate source, which controls the amount of current that flows through the transistor. As the voltage across the gate increases, the amount of Drain Current that flows through the transistor increases. When the gate voltage is reduced, the amount of Drain Current decreases. This allows the electrical charge to be regulated, enabling applications such as switching, power control, and voltage regulation.
The IRF7701TR is ideal for applications such as DC-to-DC conversion, power switching, audio amplifiers, and power supplies. A single IRF7701TR transistor can handle up to 5A of continuous current, so this device is perfect for high-current applications. The low-voltage operation also allows for efficient power conversion and reduces power loss. Additionally, the device has a high operating temperature range and is classified under RoHS standards.
Due to its unique characteristics, the IRF7701TR can also be used in other applications such as low-noise analog amplification, voltage and frequency regulation, and switching circuits. The superior on-resistance-to-gate charge ratio of the device makes it suitable for high-frequency applications such as RF amplifiers, microwave switches, and pulse width modulators. The high-current capacity and reliable operation of the device also make it suitable for automotive applications, such as circuit protection, motor control, and vehicle power systems.
Overall, the IRF7701TR is an ideal device for a variety of applications, such as DC-to-DC conversion, power switching, audio amplifiers, and power supplies. Its low-noise analog amplification, voltage and frequency regulation, and switching characteristics make it suitable for a wide range of applications, from commercial systems to consumer electronics. Additionally, the device is RoHS compliant and has a high operating temperature range. Therefore, the IRF7701TR is a reliable and adaptable choice for any application that requires efficient power conversion and lower power loss.
The specific data is subject to PDF, and the above content is for reference
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IRF7701TR Datasheet/PDF