IRF7702TR Allicdata Electronics
Allicdata Part #:

IRF7702TR-ND

Manufacturer Part#:

IRF7702TR

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET P-CH 12V 8A 8-TSSOP
More Detail: P-Channel 12V 8A (Tc) 1.5W (Tc) Surface Mount 8-TS...
DataSheet: IRF7702TR datasheetIRF7702TR Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.5W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3470pF @ 10V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 81nC @ 4.5V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 14 mOhm @ 8A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drain to Source Voltage (Vdss): 12V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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IRF7702TR is a single Field-effect Transistor (FET). Its maximum drain-source voltage is the same as that of IRF7702 and the high current drain-source is the same as that of IRF7702TR. It is a type of enhancement-mode MOSFET which is used to control electricity communication and also features good electrics and on-resistance.

Furthermore, IRF7702TR comes with a particularly low on-resistance without sacrificing any of its other properties, making it an ideal electrical control component. It also features excellent noise immunity and small gate charge, allowing for high-speed switching.

The term MOSFET is an acronym for Metal Oxide Semiconductor Field-Effect Transistor. It is a type of transistor that relies on an electric field to control the flow of current. Essentially, when a voltage is applied to the gate of the MOSFET, the electric field will cause the current to flow from the source to the drain. This makes it an ideal component for controlling high-current applications.

IRF7702TR is mainly used in a variety of applications, such as radio frequency (RF) circuits, DC/DC converters, and power switches. It is a popular choice for these applications due to its exceptionally low on-resistance and excellent noise immunity. Additionally, it has an extremely low gate charge which allows for high-speed switching. As such, it is often used in power management solutions such as DC/DC converters.

The operating principle of IRF7702TR is the same as any other enhancement-mode MOSFET. It works on the concept of an electric field, which is generated by the gate voltage. When a voltage is applied to the gate, an electric field is created which will then cause a current to flow from the source to the drain. This makes it an ideal component for controlling high-current applications.

In terms of ratings, IRF7702TR is rated at 30V and has a maximum drain-source voltage of 25V. Its maximum drain current is 6A, and its on-resistance is 0.02 ohms, making it a popular choice for controlling high-current applications. Additionally, IRF7702TR is typically soldered directly to a circuit board and is often used in surface mount applications.

In conclusion, IRF7702TR is a single FET with exceptional ratings and properties. It is mainly used in RF circuits, DC/DC converters, and power switches to control high-current applications due to its low on-resistance and excellent noise immunity. Additionally, its low gate charge allows for high-speed switching, making it an ideal component for various applications.

The specific data is subject to PDF, and the above content is for reference

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