| Allicdata Part #: | IRF7704-ND |
| Manufacturer Part#: |
IRF7704 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET P-CH 40V 4.6A 8-TSSOP |
| More Detail: | P-Channel 40V 4.6A (Ta) 1.5W (Ta) Surface Mount 8-... |
| DataSheet: |  IRF7704 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Vgs(th) (Max) @ Id: | 3V @ 250µA |
| Package / Case: | 8-TSSOP (0.173", 4.40mm Width) |
| Supplier Device Package: | 8-TSSOP |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 1.5W (Ta) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 3150pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 38nC @ 4.5V |
| Series: | HEXFET® |
| Rds On (Max) @ Id, Vgs: | 46 mOhm @ 4.6A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 4.6A (Ta) |
| Drain to Source Voltage (Vdss): | 40V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | P-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
Description
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The IRF7704 is a power MOSFET that is used in a wide variety of applications due to its fine characteristics. With a drain-source voltage of 30V, an on-resistance of 28mΩ typical, and a continuous drain current of 78A, this device is ideal for applications requiring high power. This article will discuss the IRF7704’s application field and its working principle.The IRF7704 is a 60V, logic level gate, N-Channel MOSFET that is commonly used in board level and system level applications. It is designed to facilitate the bridging of 12V circuit lines and applications that require load switching. By integrating the MOSFET structure and a built-in level shift circuitry, the IRF7704 is able to achieve the high power switching needs of a wide variety of applications. The device can be used in applications such as automatic level control circuits, high-power switching - 15A peak, voltage conversion and regulation, automotive power supply high-side and low-side switches, high-speed ON/OFF switching and load switching.The operating principle of the IRF7704 is based on the motion of electrons through a material subject to an electric field, as defined by MOSFET theory. The IRF7704 is a N-type MOSFET, which means that the conduction is accomplished by electrons flowing from the source to the drain when the gate is driven to the positive voltage relative to its source. The application of a voltage to the gate causes a conductive channel to form between the source and drain regions, allowing the current to flow from the source to the drain. The application of positive voltage to the gate will result in the depletion of the channel and the conduction paths will be blocked.One of the advantages of the IRF7704 is its ability to regulate the amount of current flowing through that device, allowing controlled current to flow between its source and drain. This greatly reduces the internal power dissipation as the current is modulated by the gate voltage. The On resistance is also very low - 28 milliohms typical, making the IRF7704 ideal for applications involving high power output. In addition, the device has an integrated thermal protection circuit which protects it from over-temperature damage.The IRF7704 is a versatile power MOSFET that can be used in a variety of applications due to its fine characteristics and low On resistance. Its ability to control the current flow and its integrated thermal protection circuit make it a preferred choice for high power applications. Its application field covers a wide range of applications, from board level and system level applications to high power switching solutions and load switching. The device’s operating principle is based on MOSFET theory, which describes the motion of electrons through a material subject to an electric field.
The specific data is subject to PDF, and the above content is for reference
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