IRF7707 Allicdata Electronics
Allicdata Part #:

IRF7707-ND

Manufacturer Part#:

IRF7707

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET P-CH 20V 7A 8-TSSOP
More Detail: P-Channel 20V 7A (Ta) 1.5W (Ta) Surface Mount 8-TS...
DataSheet: IRF7707 datasheetIRF7707 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.5W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2361pF @ 15V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 47nC @ 4.5V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 22 mOhm @ 7A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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IRF7707 is a single Continuous Drain Current MOSFET (Metal Oxide Semiconductor Field Effect Transistor, FET) designed to handle high current loads in both commercial and automotive applications. It is intended to be used as a direct replacement to legacy designs of single continuum drain current FETs.

This device has a maximum power dissipation capability of 455W and is supplied in a TO-220AB package. It is designed to provide high performance with low output capacitance and low gate-source capacitance. It also offers excellent in- and out-of-balance drain current capabilities, which makes it ideal for automotive use.

The IRF7707 is designed to provide low on-resistance and high gain for high current applications. It is also designed to provide low gate-source capacitance for fast switching speeds, and it also includes on-resistance and fabrication temperature benefits from avalanche energy capability.

The IRF7707 is primarily used in automotive applications, including power steering, anti-lock braking systems, and airbag systems. It is also used in a variety of other commercial applications, such as motor control, power supply systems, and lighting applications.

The working principle of the IRF7707 is relatively simple. It is a four-terminal device with an insulated-gate field effect transistor (IGFET) that works on the principle of field effect. It operates by controlling the amount of current flowing between two electrodes through the application of an electric field. This electric field is generated by the gate terminal, which is connected to a control voltage. The gate terminal acts to control the amount of current flowing by modulating the electric field applied to the two electrode terminals. Increasing the voltage applied to the gate terminals increases the electric field and thus increases the current flow.

The IRF7707 is generally used in static applications such as voltage regulators, power supplies, and motor control circuits. It can also be used in a variety of dynamic applications, such as switching power supplies, motor control, and digital circuits.

In static applications, the IRF7707 operates in the so-called linear range, where the drain current is proportional to the gate voltage. When an external voltage is applied to the gate, the drain current increases or decreases accordingly. In dynamic applications, the device operates in the saturation mode, where the drain current is determined by the gate voltage, rather than the drain voltage.

The IRF7707 also has several built-in protection features such as over-temperature protection, over-current protection, and electrostatic discharge (ESD) protection. Additionally, it is designed to operate safely in a variety of environmental conditions, including extreme temperature variations, and extreme vibration and shock forces. It is also designed for ease of use and minimum complexity, with features such as auto-power control.

The IRF7707 is a powerful and reliable device that is used in a wide variety of applications. It is designed for high performance with low output capacitance and low gate-source capacitance, and it also offers excellent in- and out-of-balance drain current capabilities. It is well-suited to automotive applications and can be used in a wide variety of commercial applications as well. Its excellent protection mechanisms make it a safe and reliable device for use in nearly any environment.

The specific data is subject to PDF, and the above content is for reference

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