| Allicdata Part #: | IRF7707TR-ND |
| Manufacturer Part#: |
IRF7707TR |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET P-CH 20V 7A 8-TSSOP |
| More Detail: | P-Channel 20V 7A (Ta) 1.5W (Ta) Surface Mount 8-TS... |
| DataSheet: | IRF7707TR Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 1.2V @ 250µA |
| Package / Case: | 8-TSSOP (0.173", 4.40mm Width) |
| Supplier Device Package: | 8-TSSOP |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 1.5W (Ta) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 2361pF @ 15V |
| Vgs (Max): | ±12V |
| Gate Charge (Qg) (Max) @ Vgs: | 47nC @ 4.5V |
| Series: | HEXFET® |
| Rds On (Max) @ Id, Vgs: | 22 mOhm @ 7A, 4.5V |
| Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C: | 7A (Ta) |
| Drain to Source Voltage (Vdss): | 20V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | P-Channel |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
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IRF7707TR is a transistor type device that belongs to the category of Field Effect Transistors (FETs). It has a single junction and is manufactured using Silicon-on-Insulator (SOI) technology, allowing for a wide range of applications. The device is capable of operating at high temperatures and can withstand high current and voltage levels. Additionally, it is designed for use in power switching applications, such as DC-DC converters and power supplies.
IRF7707TR is a power MOSFET, which stands for Metal-Oxide-Semiconductor Field-Effect Transistor. A power MOSFET is a type of Field Effect Transistor (FET) that is used to switch and control high current and voltage levels. It is composed of a gate, a source, and a drain, which is connected to the load. The source and drain are heavily doped regions and the gate is lightly doped. As a result, the MOSFET operates like a switch, allowing current to flow in one direction and blocking it in the other.
The working principle of the IRF7707TR is based on the operation of a MOSFET, which uses the effects of a gate electric field to control the flow of charge carriers across the drain and source. When a positive voltage is applied to the gate terminal, it creates an electric field between the drain and the source. This electric field is what controls the flow of charge carriers across the drain and source, allowing it to act as a switch. By varying the gate voltage, the MOSFET can be used to control the flow of current from the drain to the source, making it suitable for use in power switching applications.
IRF7707TR is commonly used in power switching applications, as it is capable of operating at high current and voltage levels. For example, it is often used in DC-DC converters, DC inverters, and switched-mode power supplies. It is also used in high-power amplifiers, as its low on-resistance and high maximum drain-source voltage rating allow it to deliver the current required to drive large speaker systems. Furthermore, it is used in applications that require high-speed switching, such as high-frequency motor controllers.
In conclusion, IRF7707TR is a power MOSFET that is used in applications that require high current and voltage levels, as well as high speed switching. It is designed for use in power switching applications, such as DC-DC converters, DC inverters, and switched-mode power supplies. Additionally, it is used in high-power amplifiers and high-frequency motor controllers. As a result, it is a versatile device that is suitable for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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IRF7707TR Datasheet/PDF