| Allicdata Part #: | IRF7726TR-ND |
| Manufacturer Part#: |
IRF7726TR |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET P-CH 30V 7A MICRO8 |
| More Detail: | P-Channel 30V 7A (Ta) 1.79W (Ta) Surface Mount Mic... |
| DataSheet: | IRF7726TR Datasheet/PDF |
| Quantity: | 1000 |
Specifications
| Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
| Package / Case: | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
| Supplier Device Package: | Micro8™ |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 1.79W (Ta) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 2204pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 69nC @ 10V |
| Series: | HEXFET® |
| Rds On (Max) @ Id, Vgs: | 26 mOhm @ 7A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 7A (Ta) |
| Drain to Source Voltage (Vdss): | 30V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | P-Channel |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
Description
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IRF7726TR Application Field and Working Principle
IRF7726TR is a type of insulated gate bipolar transistor (IGBT) developed by International Rectifier Corporation. It is a power transistor and is suitable for motor control applications. It is made from high quality silicon wafers and is also constructed with a built-in anode structure for enhanced performance.The IRF7726TR is used in many different applications, such as motor control, power controllers, power amplifiers, and other power switching applications. It is a three-terminal device with a drain, source, and gate terminals. The three terminals are labeled as VDS (drain-source voltage), VG (gate voltage) and VS (source voltage). The drain and source terminals are internally connected and the gate terminal is externally connected to a control voltage.The IRF7726TR has a very low on-state resistance, which makes it ideal for high power applications. This low resistance can be used to reduce power losses in circuits, resulting in higher efficiency. It also has a low gate charge, which allows it to switch faster than other types of transistors. This makes the IRF7726TR very suitable for high speed switching applications.The IRF7726TR is a low voltage, enhancement mode transistor, thus making it an ideal choice for low voltage applications. Its low voltage capability makes it suitable for applications where low power is required. It also has low capacitance and high voltage capability, allowing it to be used in high voltage applications as well. The IRF7726TR also has low forward loss, making it suitable for efficiency-based applications.The working principle of the IRF7726TR is as follows. When a control voltage is applied to the gate terminal, it causes the formation of an electrostatic field in the device, which results in an increase in current flow across the electrodes at the drain and source terminals. This increases the voltage drop across the transistor and enables current to flow from the drain to the source.The IRF7726TR is an ideal choice for applications such as motor control, power controllers, power amplifiers, and other power switching applications. Its low voltage capability, low on-state resistance, low gate charge, and low capacitance make it suitable for these applications. It is also very reliable and is designed to withstand high temperatures and vibration.
The specific data is subject to PDF, and the above content is for reference
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IRF7726TR Datasheet/PDF