Allicdata Part #: | IRF7726TRPBFTR-ND |
Manufacturer Part#: |
IRF7726TRPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET P-CH 30V 7A MICRO8 |
More Detail: | P-Channel 30V 7A (Ta) 1.79W (Ta) Surface Mount Mic... |
DataSheet: | IRF7726TRPBF Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
Supplier Device Package: | Micro8™ |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.79W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2204pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 69nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 26 mOhm @ 7A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 7A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The IRF7726TRPBF is a low-voltage MOSFET (Metal Oxide Semiconductor Field Effect Transistor) belonging to the field of single FETs (Field Effect Transistors) and existing in an ultra-small PowerPAD package. It has a very low "On" resistance of 3 mΩ (milliohms) and features an avalanche energy capability of up to 5mJ (millijoules).
As one of the most commonly used voltage regulating and switching components, the IRF7726TRPBF is uniquely designed to reduce the circuit complexity and increase the energy efficiency at the same time. It has been developed for use in power converters, power distribution, and other general-purpose functions, but it is specially suitable for high-current applications such as motor control and power supplies.
This MOSFET has the outstanding feature of having a gate threshold voltage of 2.5V, which means it can respond to signal voltages as low as 2.5V, compared to 4.5V for other similar MOSFETs. In addition, its anode peak current is 180A, allowing it to be used in high current circuits.
Apart from its physical features, the most important working principle of the IRF7726TRPBF is that of field-effect transistor (FET) operation. In contrast to bipolar transistors, which use the application of current at one end (called the emitter) to control current at the other end (called the collector), FETs use an electric field to control the flow of current. This electric field is produced by applying a voltage at the gate of the transistor.
The voltage between the source and the drain of the FET is controlled by the electric field established between the gate and the source. In other words, the electric field is modulated by the gate voltage and thus controls the current flowing between the source and the drain. In the case of the IRF7726TRPBF, the drain current is basically proportional to the gate voltage.
From the above analysis, it can be seen that the IRF7726TRPBF is an ideal choice for low voltage and high current applications. Its ease of use, low "on" resistance, and low gate voltage requirement make it a perfect solution for applications such as motor control and power supplies. In addition, its high avalanche energy capability guarantees a reliable and safe operation.
The specific data is subject to PDF, and the above content is for reference
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