IRF7805PBF Allicdata Electronics
Allicdata Part #:

IRF7805PBF-ND

Manufacturer Part#:

IRF7805PBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 30V 13A 8-SOIC
More Detail: N-Channel 30V 13A (Ta) 2.5W (Ta) Surface Mount 8-S...
DataSheet: IRF7805PBF datasheetIRF7805PBF Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 3V @ 250µA
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta)
FET Feature: --
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 31nC @ 5V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 11 mOhm @ 7A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Discontinued at Digi-Key
Packaging: Tube 
Description

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IRF7805PBF is a common power MOSFET with the package type of TO92. It is a single N-channel MOSFET. This MOSFET has been widely used in the modern elecronic industry due to its capability to provide relatively low resistance in ON-state and low gate charge, thereby allowing low power dissipation.

The application field of the IRF7805PBF can be divided into two categories: power switch and signal switch. As a power switch, it can be used to control high voltage between 5V and 36V and high current between 0.4A to 2.4A. By connecting this MOSFET to a PWM signal, it can create different duty-cycles and switch the power accordingly. As a signal switch, it is mainly used to switch ON/OFF devices such as relay, buzzer, and so on. This allows these devices to be conveniently controlled by the PWM signal.

In terms of the working principle, the IRF7805PBF is an N-channel MOSFET. The Controlled gate allows the flow of electrons between the drain and the source, which can be used to switch ON/OFF the power. The resistance of the MOSFET can be described as “RDSON”, which is the resistance between the drain and source when the device is in ON-state. For IRF7805PBF, the RDSON is relatively low, at 10m. When the gate is not activated, no current will be fed to the MOSFET, and therefore it will be in OFF-state, forcing the drain and source to have an infinite resistance.

The power MOSFET IRF7805PBF is an ideal choice for low power and low voltage applications. Its low RDSON allows for switching power without incurring too much loss and its package size has great compatibility with the existing circuit boards. It may require a more sophisticated drive circuit than the traditional bipolar transistors, yet the control of this MOSFET offers higher immunity to temperature variation, longer lifetime and fewer noises.

The specific data is subject to PDF, and the above content is for reference

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