Allicdata Part #: | IRF7807D2-ND |
Manufacturer Part#: |
IRF7807D2 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 30V 8.3A 8-SOIC |
More Detail: | N-Channel 30V 8.3A (Ta) 2.5W (Ta) Surface Mount 8-... |
DataSheet: | IRF7807D2 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta) |
FET Feature: | Schottky Diode (Isolated) |
Vgs (Max): | ±12V |
Gate Charge (Qg) (Max) @ Vgs: | 17nC @ 5V |
Series: | FETKY™ |
Rds On (Max) @ Id, Vgs: | 25 mOhm @ 7A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 8.3A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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IRF7807D2 is an enhancement field-effect transistor (FET) designed for use in industrial and commercial applications. It’s a three-terminal device with source, drain, and gate contact. It’s designed to reduce gate charge and source-drain resistance, making it an ideal choice for applications requiring high speed, low power consumption, and reliability.
Application Field of IRF7807D2
IRF7807D2 is commonly used in industrial and commercial applications, such as motor driver circuits, power electronic systems, AC/DC, DC/DC and DC/AC converters. Additionally, it’s used in PFC and PT operating power converters, high frequency SMPS, and solar inverters. Its low on-state resistance, low gate charge, and low input capacitance make it an ideal device for these types of applications.
The IRF7807D2 has a high current carrying capacity and is able to handle up to 8A current. It also has a low on-state resistance, which helps to reduce heat buildup. Additionally, it has a low gate threshold voltage and a high operating temperature. It’s also very reliable and can be used in harsh environments.
Working Principle of IRF7807D2
IRF7807D2 is a type of field-effect transistor that operates on the principle of a semiconductor. It works by creating an electric field between the source and the drain, which increases or decreases in strength depending on the voltage applied at the gate. This allows the current to flow between the source and the drain, allowing the transistor to be used as a switching device.
The gate voltage determines the amount of current that is being allowed to flow, and this is regulated by the gate-source voltage. The higher the gate voltage, the higher the current will flow between the source and drain. Additionally, the gate-source voltage also controls the on-state resistance of the transistor. This resistance will decrease as the gate voltage increases.
When the gate voltage is the same as the source voltage, the transistor is in the on-state, and the current will flow between the source and the drain. When the voltage of the gate is lower than the source voltage, the transistor is in the off-state, and no current will flow.
Conclusion
The IRF7807D2 is a versatile field-effect transistor designed for use in a wide range of industrial and commercial applications. It’s extremely reliable and can handle up to 8A current. Additionally, it has a low on-state resistance and a low gate threshold voltage, making it an ideal choice for applications requiring high speed and low power consumption. It works on the principle of a semiconductor, creating an electric field between the source and the drain. The behaviour of this electric field is determined by the voltage at the gate.
The specific data is subject to PDF, and the above content is for reference
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