| Allicdata Part #: | IRF7807TR-ND |
| Manufacturer Part#: |
IRF7807TR |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 30V 8.3A 8-SOIC |
| More Detail: | N-Channel 30V 8.3A (Ta) 2.5W (Ta) Surface Mount 8-... |
| DataSheet: | IRF7807TR Datasheet/PDF |
| Quantity: | 1000 |
| Rds On (Max) @ Id, Vgs: | 25 mOhm @ 7A, 4.5V |
| Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package: | 8-SO |
| Mounting Type: | Surface Mount |
| Power Dissipation (Max): | 2.5W (Ta) |
| FET Feature: | -- |
| Vgs (Max): | ±12V |
| Gate Charge (Qg) (Max) @ Vgs: | 17nC @ 5V |
| Vgs(th) (Max) @ Id: | 1V @ 250µA |
| Series: | HEXFET® |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V |
| Current - Continuous Drain (Id) @ 25°C: | 8.3A (Ta) |
| Drain to Source Voltage (Vdss): | 30V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
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IRF7807TR is a type of single-channel Mosfet transistors. It is a very popular device for a variety of applications including efficient control of power, commutation of inductive current, protection from high voltage, and operation of linear circuits. This article will discuss the application areas and working principle of this device.
Application Areas
IRF7807TR can be used in a wide range of application areas. The device is commonly used for efficient control of power in low or high voltage DC power circuits. It can also be used to commutate inductive currents, as well as to provide protection from high voltages. The device is also suitable for operation of linear circuits, such as amplifiers. It can also be used to provide voltage and current regulation and buffering in power supply designs.
Working Principle
The working principle of IRF7807TR is that of a single-channel Mosfet transistor. A Mosfet transistor is a type of field effect transistor (FET) that designed to handle larger currents and higher voltages than other types of transistors. This makes it ideal for use in power control circuits.
The working principle of IRF7807TR is based on the idea of controlling the flow of electrons in and out of the gate of the device. When a voltage is applied to the gate, it will alter the flow of current through the channel – this current is known as the drain current. The flow of current can be increased or decreased in response to changes in the gate voltage. This can be used to regulate the amount of power that is being supplied to the circuit.
The device can also be used to provide protection from high voltages, as it has a high breakdown voltage of 450V. This allows the device to protect connected components from high voltage surges, and provides a safer working environment.
Conclusion
IRF7807TR is a popular device for use in a wide range of applications, including control of power, commutation of current, and providing protection from voltage surges. The device is based on the single-channel Mosfet transistor principle, which allows for regulation of current and voltage, as well as protection from high voltage surges. With its versatile design, IRF7807TR is an excellent choice for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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IRF7807TR Datasheet/PDF