IRF7807TRPBF Allicdata Electronics
Allicdata Part #:

IRF7807PBFTR-ND

Manufacturer Part#:

IRF7807TRPBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 30V 8.3A 8-SOIC
More Detail: N-Channel 30V 8.3A (Ta) 2.5W (Ta) Surface Mount 8-...
DataSheet: IRF7807TRPBF datasheetIRF7807TRPBF Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 1V @ 250µA
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta)
FET Feature: --
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 5V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 25 mOhm @ 7A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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IRF7807TRPBF is a latest N-channel MOSFET from international rectifier, which is suitable for a wide range of applications such as motor control, lighting, linear regulation and more. This new device has low on-resistance and fast switching speed. It is also designed to sustain very high power density, making it perfect for applications with limited space. IRF7807TRPBF is highly suitable for battery operated equipment due to its high-efficiency performance and low power consumption.

The IRF7807TRPBF physically looks like a traditional metal oxide semiconductor field effect transistor (MOSFET), but is much more powerful than other types of transistors. It is composed of a source, a drain, and a gate. The source and drain are both doped regions of a semiconductor material, the gate being an insulated gate between them. The IRF7807TRPBF is a highly versatile MOSFET, able to function as either an amplifier or a switch.

The IRF7807TRPBF is used to control the current flow between the source, and the drain through a small voltage applied to the gate. By varying the gate voltage, the amount of current that will flow can be precisely adjusted. This is known as the principle of electrostatic control. As the gate voltage increases, the electrons move from the source to the drain and the current will increase.

The IRF7807TRPBF works on the principle of majority carrier control. When the gate voltage is applied, the electrons in a channel between the source and drain are attracted and they move to the drain. The difference between the gate voltage and the drain voltage is called the threshold voltage, which determines the current gain. At small gate voltages the threshold voltage is purely dependent on the doping concentration in the channel. However, as the gate voltage increases the channel length becomes important and affects the current gain.

The IRF7807TRPBF is especially suitable for applications where high power output is required. Its high power density enables more efficient performance than other types of MOSFETs. It also offers improved immunity to latch-up, making it ideal for digital circuits. The IRF7807TRPBF is also perfect for automotive applications, as it can withstand wide temperature extremes and surge voltages.

The IRF7807TRPBF is an excellent choice for a wide variety of applications. Its low power consumption and high power density make it an ideal choice for battery powered devices, while its high-efficiency and fast switching speed make it perfect for motor control and lighting applications. Additionally, it offers improved immunity to latch-up and wide temperature range making it suitable for automotive use. So, if you’re looking for a reliable, low power alternative for your circuit, the IRF7807TRPBF is an ideal option.

The specific data is subject to PDF, and the above content is for reference

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