IRF7807Z

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IRF7807Z is a dual N-Channel metal-oxide-semiconductor field-effect transistor (MOSFET). It is primarily used in switching applications. Being an enhancement-mode device, it is capable of switching voltages of up to 100V with a maximum peak current of 27A. It has low drain-to-source on-state resistance, making it an ideal choice for applications where efficiency and power dissipation is of importance.

This MOSFET belongs to a fast-switching type of transistors, and its P-channel version is the IRF7807ZP. It comes in a TO-220 package and is typically used for power switching as well as voltage level shifting. This device is available from various manufacturers, including International Rectifier Corporation, Infineon Technologies, and Vishay.

Application Field

The IRF7807Z dual N-Channel MOSFET is widely used in switching applications. It is often found in motor drives, Uni- and Bi-directional motor control, battery power management, voltage level shifting, and power supplies. This device is also a popular choice for DC-DC conversion, and for controlling the speed of stepper motors. Other applications include DC-AC inverters, RF amplifiers, battery pack cell balancing, and solenoids. Due to its high speed and low on-state resistance, it is often used in applications where efficiency and power dissipation is of importance.

Working Principle

The IRF7807Z is an enhancement-mode MOSFET, meaning that it is normally off. For the device to switch on, a positive (“Logic 1”) voltage must be applied to the Gate terminal. The Gate is insulated from the source and drain by an oxide barrier, which prevents current from flowing through it. When a voltage is applied to the Gate, the source and drain will become connected. This initiates a new path for current to flow from the source to the drain, resulting in the MOSFET switching on.

Unlike most other transistors, the IRF7807Z MOSFET is not a current-controlled device. Instead, it is voltage-controlled, meaning that once a voltage is applied to the Gate, the MOSFET will remain on until that voltage is removed. Also, the voltage applied to the Gate does not need to be very high – in fact, for the IRF7807Z, a voltage as low as 2V will be sufficient for the device to remain on. This makes it a convenient choice for applications where voltage-level switching or signal conditioning is required.

When switching off the device, the gate voltage can either be pulled to ground (“Logic 0”) or an off-state voltage such as -10V can be applied. This will ensure that the Gate voltage is below the threshold of the device and thus the MOSFET will switch off. Once switched off, the device will remain in the off-state until a positive voltage is applied to the Gate again.

Conclusion

The IRF7807Z is a dual N-Channel MOSFET that is commonly used in switching applications. It is an enhancement-mode device, meaning that it is normally off. When a positive voltage is applied to the Gate terminal, it will switch on and allow current to flow from the Source to the Drain. The device is voltage-controlled, meaning that when it is switched on, it will remain on until the voltage is removed. It has low on-state resistance and is capable of switching voltages of up to 100V with a maximum peak current of 27A. This makes it a popular choice for applications where efficiency and power dissipation is of importance.

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