Allicdata Part #: | IRF7809-ND |
Manufacturer Part#: |
IRF7809 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 30V 17.6A 8-SOIC |
More Detail: | N-Channel 30V 17.6A (Ta) 3.5W (Ta) Surface Mount 8... |
DataSheet: | IRF7809 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Mounting Type: | Surface Mount |
Power Dissipation (Max): | 3.5W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 7300pF @ 16V |
Vgs (Max): | ±12V |
Gate Charge (Qg) (Max) @ Vgs: | 86nC @ 5V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 7.5 mOhm @ 15A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 17.6A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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A Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) is a type of transistor that is used in many electronic devices. The IRF7809 is a MOSFET manufactured by International Rectifier and it is widely used in power electronics applications. This article will describe the application fields of the IRF7809 and its working principle.
Application Fields
The IRF7809 is a power MOSFET, which means it is capable of efficiently switching large amounts of power. It has a robust casing to protect it from physical shock and vibration, and it has very low on-resistance. This makes it suitable for use in a variety of circuits, from simple switching circuits to complex power inverters. It is also a popular choice for motor control, as its low on-resistance allows for effiecient driving of high-current loads. Additionally, the IRF7809 has built in protection against short circuit and overload, making it a reliable and safe option in such applications.
Working Principle
The IRF7809 is a N-channel MOSFET, meaning it contains two layers of metal and two layers of insulating material inside its casing. This creates three separate regions within the transistor – source, gate, and drain. When a voltage is applied to the gate of the MOSFET, an electric field is generated between the metal and the insulating layers, which “opens” the transistor, allowing current to flow from the source to the drain. Without a voltage applied to the gate, the transistor is in its “closed” state, blocking current from passing. By applying or removing a voltage to the gate, it is possible to switch the transistor on and off, allowing the current to be controlled.
Conclusion
The IRF7809 is a popular and reliable MOSFET suitable for a variety of power applications. It can be used to control high-current loads efficiently and safely, thanks to its low on-resistance and built-in protection. It works by the application of a voltage to the gate which creates an electric field that opens and closes the transistor, allowing the current to be controlled.
The specific data is subject to PDF, and the above content is for reference
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