IRF7828PBF Allicdata Electronics
Allicdata Part #:

IRF7828PBF-ND

Manufacturer Part#:

IRF7828PBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 30V 13.6A 8-SOIC
More Detail: N-Channel 30V 13.6A (Ta) 2.5W (Ta) Surface Mount 8...
DataSheet: IRF7828PBF datasheetIRF7828PBF Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 1V @ 250µA
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1010pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 5V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 12.5 mOhm @ 10A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Current - Continuous Drain (Id) @ 25°C: 13.6A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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IRF7828PBF is a N-Channel enhancement-mode power field effect transistor (FET) with industry-leading performance capabilities. This transistor provides superior switching performance with extremely low on-resistance that significantly reduces power loss and minimizes electromagnetic interference. With its wide variety of range, the IRF7828 can be used in a variety of applications, such as switched-mode power supplies and power converters, motor drivers, automotive power systems, and general-purpose switching and signal transmission.

An enhancement-mode power FET is a type of transistor that operates in the semiconductor state. In contrast to other FETs such as depletion-mode transistors, an enhancement-mode power FET requires electrical control in order to activate it and become conductive. In other words, an externally applied voltage needs to be applied to the gate of the FET to move the electrical current through the device. This process is known as biasing.

As previously mentioned, the IRF7828PBF is an N-Channel FET, meaning it has an arrangement of N-type conduction channels between the drain and source terminals. The N-type conduction channel is formed when a voltage is applied to the gate, which causes a change of the charge concentration at the interface of the semiconductor channel. This attracts electrons from the source to the drain, and at the same time, the source and drain voltages drive the electrons away from the gate. This state where the drain and source are electrically connected is known as the conducting state. When the voltage at the gate is zero or negative, the N-type conduction channel closes and the FET is in its non-conducting state.

The IRF7828PBF has a maximum on-resistance rating of 0.5 ohms, which is one of the lowest in the industry. This is important because on-resistance is the amount of resistance that is in series with the load. By having a low on-resistance, the power loss and EMI (electromagnetic interference) are reduced. This also means that the FET can operate more efficiently since less power will be needed to move the same amount of current.

The IRF7828PBF also has an exceptionally high breakdown voltage rating of up to 500V. The breakdown voltage is the voltage at which the transistor will enter the breakdown mode and become damaged. This rating is extremely important in applications that require a large amount of current. By having a high breakdown voltage, the IRF7828PBF can be used in applications that require higher voltage ratings and still be reliable.

One of the most common applications for the IRF7828PBF is motor control. This transistor is used in motor controllers because of its low on-resistance and wide voltage range. Low resistance allows the transistor to provide efficient operation, while the wide voltage range allows the transistor to handle high voltage applications without risk of breakdown. In addition, the IRF7828PBF has a fast switching time, allowing it to handle a wide range of motor speeds.

In addition to motor control applications, the IRF7828PBF can also be used in switched-mode power supplies and power converters. The low on-resistance of the transistor allows for power losses to be kept to a minimum, while the wide voltage range of the transistor enables it to handle high voltage loads. In addition, the fast switching time of the transistor also makes it ideal for applications such as voltage regulators and DC/DC converters.

The IRF7828PBF can also be used for automotive power systems. This transistor is designed to handle applications such as fuel pumps, power lift gates, headlights dimmers, and more. The low resistance of the transistor helps to ensure efficient operation and prevents the loss of energy. In addition, the wide voltage range of the transistor allows it to handle high voltage loads without the risk of breakdown.

Overall, the IRF7828PBF is an ideal choice for a variety of applications. Its low on-resistance and wide voltage range make it ideal for motor controllers, switched-mode power supplies, power converters, and automotive power systems. In addition, its fast switching time makes it perfect for voltage regulators and other DC/DC converters. With its variety of industry-leading performance capabilities, the IRF7828PBF is an excellent option for any application.

The specific data is subject to PDF, and the above content is for reference

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