| Allicdata Part #: | IRF7832PBFTR-ND |
| Manufacturer Part#: |
IRF7832TRPBF |
| Price: | $ 0.26 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 30V 20A 8-SOIC |
| More Detail: | N-Channel 30V 20A (Ta) 2.5W (Ta) Surface Mount 8-S... |
| DataSheet: | IRF7832TRPBF Datasheet/PDF |
| Quantity: | 13200 |
| 1 +: | $ 0.26400 |
| 10 +: | $ 0.25608 |
| 100 +: | $ 0.25080 |
| 1000 +: | $ 0.24552 |
| 10000 +: | $ 0.23760 |
| Vgs(th) (Max) @ Id: | 2.32V @ 250µA |
| Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package: | 8-SO |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 155°C (TJ) |
| Power Dissipation (Max): | 2.5W (Ta) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 4310pF @ 15V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 51nC @ 4.5V |
| Series: | HEXFET® |
| Rds On (Max) @ Id, Vgs: | 4 mOhm @ 20A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 20A (Ta) |
| Drain to Source Voltage (Vdss): | 30V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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The IRF7832TRPBF is a single N-Channel, 30 V, 4.1 Ohm, 0.8 A Power MOSFET, designed using the newest production techniques and processes. It is designed specifically to take care of a broad range of applications, including low voltage power management and high power switching where thermal performance is of the utmost importance. The device makes use of a new advanced trench MOSFET technology, which gives it excellent RDS(ON) and low on-state resistance values. It is ideal for applications such as chargers and voltage regulators as well as power switches and motor controllers.
The IRF7832TRPBF is a MOSFET, or metal-oxide semiconductor field-effect transistor. MOSFETs are the fundamental building blocks of digital electronic and integrated circuit systems. As the most common type of transistor, the MOSFET is used to control current flow in nearly every type of digital system, including memories, logic circuits, and microprocessors. They can also be used as switches, amplifiers, and more. The IRF7832TRPBF is especially useful for low voltage power management because of its combination of low power consumption, low on-resistance values, and high-performance capabilities.
The MOSFET is made up of three terminals - gate, source, and drain - each of which has a different function. The gate is the control terminal, and when it has a voltage applied, it can either conduct or block current between the source and the drain. The source is connected to the power source, while the drain is connected to the load. Applying a voltage to the gate can either turn the current flow on or off. The MOSFET is ideal for low voltage power management because it can be used to rapidly turn the current on or off.
The IRF7832TRPBF can handle a broad range of temperatures from -55⁰C to +150⁰C, making it suitable for use in extreme environmental conditions. It can handle up to 8A of continuous drain-source current, with an on-resistance as low as 4.1 ohms at 10V gate-source voltage. As an N-Channel MOSFET, it can easily switch in both directions, allowing it to be used for both high and low side switching applications. Its low thermal resistance and low gate-threshold voltage allow it to handle high switching frequencies.
The IRF7832TRPBF is a versatile and robust device, well suited for a variety of applications, including voltage regulators, power switches, motor controllers, chargers and other high performance, low voltage power applications. Its low on-resistance values, low power consumption, and advanced features make it an excellent choice for power management and switching. This makes it ideal for applications where thermal performance is of the utmost importance.
The specific data is subject to PDF, and the above content is for reference
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IRF7832TRPBF Datasheet/PDF