IRF7834PBF Allicdata Electronics
Allicdata Part #:

IRF7834PBF-ND

Manufacturer Part#:

IRF7834PBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 30V 19A 8-SOIC
More Detail: N-Channel 30V 19A (Ta) 2.5W (Ta) Surface Mount 8-S...
DataSheet: IRF7834PBF datasheetIRF7834PBF Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 2.25V @ 250µA
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3710pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 4.5V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 19A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Discontinued at Digi-Key
Packaging: Tube 
Description

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IRF7834PBF, a enhancement-mode vertical MOSFET, is a power MOSFET transistor with a Drain−Source voltage up to 60V and a Gate−Source voltage up to 30V. Manufactured by the International Rectifier Corporation, a leader in the power management and control technology, the IRF7834PBF is designed in a standard low-profile PowerFLAT package. It is capable of delivering a continuous 4.5A output current. It provides better savings on energy cost and maximum reliability with the company’s patented HEXFET design, Cool MOS Technology and improved parallel operation.

Application Field and Working Principle of IRF7834PBF

The IRF7834PBF features many useful characteristics useful to many electronics projects. It integrates a fast switching speed, low gate drive power needs, and reduced total gate charge, making it a great option for audio designs. All these features make the IRF7834PBF an ideal component for many audio and other consumer electronics applications, such as Laptop CPUs, Cellular phones and Personal Digital Assistants (PDAs).

The working principle of the IRF7834PBF is relatively simple. When the Gate voltage is greater than the Source voltage – usually 2 or 3 volts – the MOSFET transistor is placed in an “On” state. This allows current to flow through the transistor from the Drain to the Source. When the Gate voltage is reduced, the MOSFET transistor is placed in an “Off” state, preventing the current from flowing from the Drain to the Source. This process allows for the efficient and reliable control of higher currents.

The IRF7834PBF has high capacitance between the Drain–Source terminals, allowing for fast switching speeds with reduced power needs. These two features make the IRF7834PBF well-suited for high-speed switching applications, like motor control and power conversion.

The IRF7834PBF transistors offer an improved thermal resistance profile, significantly increasing the power dissipation and heat dissipation performance, while keeping the power requirements relatively low. This makes IRF7834PBF an ideal component for high-performance power supplies and other power-handling devices.

Additionally, due to its low-profile 6-Pin PowerFLAT package, the IRS7834PBF can be used in small-space-requiring designs like medical devices and communications equipment.

In summary, IRF7834PBF transistors from the International Rectifier Corporation may be used in many facets of the audio, communication and industrial industries due to their faster switching speed, features such as lower gate drive power needs, reduced total gate charge, improved thermal profile, and their low finger-count 6-Pin PowerFLAT packages. The users of IRF7834PBF stand to benefit from power savings, increased system efficiency and the maximum reliability afforded by the company’s CoolMOS technology, patented HEXFET design, and improved parallel operation.

The specific data is subject to PDF, and the above content is for reference

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